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of 435
pro vyhledávání: '"von Wenckstern, Holger"'
Due to their low-temperature processing capability and ionic bonding configuration, amorphous oxide semiconductors (AOS) are well suited for applications within future mechanically flexible electronics. Over the past couple of years, amorphous zinc t
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In recent years, ultra-wide bandgap semiconductors have increasingly moved into scientific focus due to their outstanding material properties, making them promising candidates for future applications within high-power electronics or solar-blind photo
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https://ul.qucosa.de/id/qucosa%3A85138
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Autor:
Fares, Chaker, Xian, Minghan, Smith, David J., McCartney, M.R., Kneiß, Max, von Wenckstern, Holger, Grundmann, Marius, Tadjer, Marko, Ren, Fan, Pearton, S.J.
The band alignment of Atomic Layer Deposited SiO 2 on (In x Ga1−x) 2 O 3 at varying indium concentrations is reported before and after annealing at 450 °C and 600 °C to simulate potential processing steps during device fabrication and to determin
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https://ul.qucosa.de/id/qucosa%3A85021
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Autor:
Borgersen, J., Vines, L., Frodason, Y.K., Kuznetsov, A., von Wenckstern, Holger, Grundmann, Marius, Allen, M., Zuniga-Perez, J., Johansen, K.M.
The evolution of electrical resistance as function of defect concentration is examined for the unipolar n-conducting oxides CdO, β-Ga 2 O 3, In 2 O 3, SnO 2 and ZnO in order to explore the predictions of the amphoteric defect model. Intrinsic defe
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https://ul.qucosa.de/id/qucosa%3A85017
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Autor:
Krieg, Linus, Zhang, Zhipeng, Splith, Daniel, von Wenckstern, Holger, Grundmann, Marius, Wang, Xiaoxue, Gleason, Karen K., Voss, Tobias
We report the controlled formation of organic/inorganic Schottky diodes by depositing poly(3,4- ethylenedioxythiophene) (PEDOT) on n-doped ZnO layers using oxidative chemical vapor deposition (oCVD). Current-voltage measurements reveal the formation
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https://ul.qucosa.de/id/qucosa%3A85016
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Autor:
Brillson, Leonard, Cox, Jonathan, Gao, Hantian, Foster, Geoffrey, Ruane, William, Jarjour, Alexander, Allen, Martin, Look, David, von Wenckstern, Holger, Grundmann, Marius
This review presents recent research advances in measuring native point defects in ZnO nanostructures, establishing how these defects affect nanoscale electronic properties, and developing new techniques to manipulate these defects to control nano- a
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https://ul.qucosa.de/id/qucosa%3A84643
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Autor:
Mavlonov, Abdurashid, Richter, Steffen, von Wenckstern, Holger, Schmidt-Grund, Rüdiger, Lorenz, Michael, Grundmann, Marius
We studied the doping efficiency of Al and Ga dopants in (Mg,Zn)O alloys as a function of the growth temperature and post growth annealing times. High-temperature growth results in the highest structural quality and highest electron mobility; the dop
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https://ul.qucosa.de/id/qucosa%3A31212
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We report on ultraviolet photodiodes with integrated optical filter based on the wurtzite (Mg,Zn)O thin films. Tuning of the bandgap of filter and active layers was realized by employing a continuous composition spread approach relying on the ablatio
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https://ul.qucosa.de/id/qucosa%3A23555
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UV and deep-UV selective photodiodes from visible-blind to solar-blind were realized based on a Si-doped (InxGa1–x)2O3 thin film with a monotonic lateral variation of 0.0035
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https://ul.qucosa.de/id/qucosa%3A23547
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The low frequency noise of metal-semiconductor field-effect transistors (MESFETs) based on ZnO:Mg thin films grown by pulsed laser deposition on a-plane sapphire was investigated. In order to distinguish between noise generation in the bulk channel m
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https://ul.qucosa.de/id/qucosa%3A31224
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