Zobrazeno 1 - 10
of 163
pro vyhledávání: '"van der Wiel, W"'
Autor:
Smink, A. E. M., Prabowo, B., Stadhouder, B., Gauquelin, N., Schmitz, J., Hilgenkamp, H., van der Wiel, W. G.
At the LaAlO$_3$-SrTiO$_3$ interface, electronic phase transitions can be triggered by modulation of the charge carrier density, making this system an excellent prospect for the realization of versatile electronic devices. Here, we report repeatable
Externí odkaz:
http://arxiv.org/abs/1909.12586
Autor:
Smink, A. E. M., Stehno, M. P., de Boer, J. C., Brinkman, A., van der Wiel, W. G., Hilgenkamp, H.
Publikováno v:
Phys. Rev. B 97, 245113 (2018)
By combined top- and backgating, we explore the correlation of superconductivity with band filling and electron confinement at the LaAlO$_3$-SrTiO$_3$ interface. We find that the top- and backgate voltages have distinctly different effects on the sup
Externí odkaz:
http://arxiv.org/abs/1801.02881
Publikováno v:
Scientific Reports 6, Article number: 38127 (2016)
In this Report we show the role of charge defects in the context of the formation of electrostatically defined quantum dots. We introduce a barrier array structure to probe defects at multiple locations in a single device. We measure samples both bef
Externí odkaz:
http://arxiv.org/abs/1702.06857
Autor:
Smink, A. E. M., de Boer, J. C., Stehno, M. P., Brinkman, A., van der Wiel, W. G., Hilgenkamp, H.
Publikováno v:
Phys. Rev. Lett. 118, 106401 (2017)
The 2-dimensional electron system at the interface between LaAlO$_{3}$ and SrTiO$_{3}$ has several unique properties that can be tuned by an externally applied gate voltage. In this work, we show that this gate-tunability extends to the effective ban
Externí odkaz:
http://arxiv.org/abs/1610.02299
Publikováno v:
Scientific Reports 6, 18827 (2016)
Nonlocality is a key feature discriminating quantum and classical physics. Quantum-interference phenomena, such as Young's double slit experiment, are one of the clearest manifestations of nonlocality, recently addressed as $dynamical$ to specify its
Externí odkaz:
http://arxiv.org/abs/1512.03701
Autor:
Snelder, M., Stehno, M. P., Golubov, A. A., Molenaar, C. G., Scholten, T., Wu, D., Huang, Y. K., van der Wiel, W. G., Golden, M. S., Brinkman, A.
We study the proximity effect between the fully-gapped region of a topological insulator in direct contact with an s-wave superconducting electrode (STI) and the surrounding topological insulator flake (TI) in Au/Bi$_{1.5}$Sb$_{0.5}$Te$_{1.7}$Se$_{1.
Externí odkaz:
http://arxiv.org/abs/1506.05923
Autor:
Snelder, M., Molenaar, C. G., Pan, Y., Wu, D., Huang, Y. K., de Visser, A., Golubov, A. A., van der Wiel, W. G., Hilgenkamp, H., Golden, M. S., Brinkman, A.
Publikováno v:
Supercond. Sci. Technol. 27 (2014) 104001
A Josephson supercurrent has been induced into the three-dimensional topological insulator Bi1.5Sb0.5Te1.7Se1.3. We show that the transport in Bi1.5Sb0.5Te1.7Se1.3 exfoliated flakes is dominated by surface states and that the bulk conductivity can be
Externí odkaz:
http://arxiv.org/abs/1406.7687
We report the electrical top-gating of a 2-dimensional electron gas (2DEG) formed at the LaAlO3/SrTiO3 interface, using electron-beam evaporated Au gate electrodes. In these structures, epitaxial LaAlO3 films grown by pulsed laser deposition induce t
Externí odkaz:
http://arxiv.org/abs/1306.5673
Autor:
Spruijtenburg, P. C., Ridderbos, J., Mueller, F., Leenstra, A. W., Brauns, M., Aarnink, A. A. I., van der Wiel, W. G., Zwanenburg, F. A.
Publikováno v:
Appl. Phys. Lett. 102, 192105 (2013)
In this letter we report single-hole tunneling through a quantum dot in a two-dimensional hole gas, situated in a narrow-channel field-effect transistor in intrinsic silicon. Two layers of aluminum gate electrodes are defined on Si/SiO$_2$ using elec
Externí odkaz:
http://arxiv.org/abs/1304.2870
Organic and carbon-based materials are attractive for spintronics because their small spin-orbit coupling and low hyperfine interaction is expected to give rise to large spin-relaxation times. However, the corresponding spin-relaxation length is not
Externí odkaz:
http://arxiv.org/abs/1005.3991