Zobrazeno 1 - 10
of 75
pro vyhledávání: '"van der Wal, Caspar H"'
Autor:
Ecker, Sebastian, Fink, Matthias, Scheidl, Thomas, Sohr, Philipp, Ursin, Rupert, Arshad, Muhammad Junaid, Bonato, Cristian, Cilibrizzi, Pasquale, Gali, Adam, Udvarhelyi, Péter, Politi, Alberto, Trojak, Oliver J., Ghezellou, Misagh, Hassan, Jawad Ul, Ivanov, Ivan G., Son, Nguyen Tien, Burkard, Guido, Tissot, Benedikt, Hendriks, Joop, Gilardoni, Carmem M., van der Wal, Caspar H., David, Christian, Astner, Thomas, Koller, Philipp, Trupke, Michael
Quantum communication promises unprecedented communication capabilities enabled by the transmission of quantum states of light. However, current implementations face severe limitations in communication distance due to photon loss. Silicon carbide (Si
Externí odkaz:
http://arxiv.org/abs/2403.03284
Autor:
Rojas-Lopez, Rafael R., Hendriks, Freddie, van der Wal, Caspar H., Guimarães, Paulo S. S., Guimarães, Marcos H. D.
Understanding the relaxation and recombination processes of excited states in two-dimensional (2D)/three-dimensional (3D) semiconductor heterojunctions is essential for developing efficient optical and (opto)electronic devices which integrate new 2D
Externí odkaz:
http://arxiv.org/abs/2309.14067
Autor:
Rojas-Lopez, Rafael R., Hendriks, Freddie, van der Wal, Caspar H., Guimarães, Paulo S. S., Guimarães, Marcos H. D.
Publikováno v:
IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at 2D Mater. 10 035013 (2023)
Semiconductor transition metal dichalcogenides (TMDs) have equivalent dynamics for their two spin/valley species. This arises from their energy-degenerated spin states, connected via time-reversal symmetry. When an out-of-plane magnetic field is appl
Externí odkaz:
http://arxiv.org/abs/2302.14206
Autor:
Hendriks, Joop, Gilardoni, Carmem M., Adambukulam, Chris, Laucht, Arne, van der Wal, Caspar H.
Progress with quantum technology has for a large part been realized with the nitrogen-vacancy centre in diamond. Part of its properties, however, are nonideal and this drives research into other spin-active crystal defects. Several of these come with
Externí odkaz:
http://arxiv.org/abs/2210.09942
Autor:
Zwier, Olger V., Bosma, Tom, Gilardoni, Carmem M., Yang, Xu, Onur, Alexander R., Ohshima, Takeshi, Son, Nguyen T., van der Wal, Caspar H.
Publikováno v:
Journal of Applied Physics 131, 094401 (2022)
Electromagnetically induced transparency (EIT) is a phenomenon that can provide strong and robust interfacing between optical signals and quantum coherence of electronic spins. In its archetypical form, mainly explored with atomic media, it uses a (n
Externí odkaz:
http://arxiv.org/abs/2203.09869
Autor:
Bosma, Tom, Hendriks, Joop, Ghezellou, Misagh, Son, Nguyen T., Ul-Hassan, Jawad, van der Wal, Caspar H.
Publikováno v:
Journal of Applied Physics 131, 025703 (2022)
Color-center defects in silicon carbide promise opto-electronic quantum applications in several fields, such as computing, sensing and communication. In order to scale down and combine these functionalities with the existing silicon device platforms,
Externí odkaz:
http://arxiv.org/abs/2202.10932
Hyperfine-mediated transitions between electronic spin-1/2 levels of transition metal defects in SiC
Publikováno v:
New J. of Physics, 23 (2021) 083010
Transition metal defects in SiC give rise to localized electronic states that can be optically addressed in the telecom range in an industrially mature semiconductor platform. This has led to intense scrutiny of the spin and optical properties of the
Externí odkaz:
http://arxiv.org/abs/2104.12433
Publikováno v:
Phys. Rev. B 103, 115410 (2021)
Transition metal dichalcogenides (TMDs) combine interesting optical and spintronic properties in an atomically-thin material, where the light polarization can be used to control the spin and valley degrees-of-freedom for the development of novel opto
Externí odkaz:
http://arxiv.org/abs/2101.01565
Autor:
Quereda, Jorge, Hidding, Jan, Ghiasi, Talieh S., van Wees, Bart J., van der Wal, Caspar H., Guimaraes, Marcos H. D.
Circular photocurrents (CPC), namely circular photogalvanic (CPGE) and photon drag effects, have recently been reported both in monolayer and multilayer transition metal dichalcogenide (TMD) phototransistors. However, the underlying physics for the e
Externí odkaz:
http://arxiv.org/abs/2008.09023
Publikováno v:
Physical Review B 101 (2), 026404 (2020)
Here we emphasize once more the distinction between generating CISS (spin-charge current conversion) in a chiral system and detecting it as magnetoresistance in two-terminal electronic devices. We also highlight important differences between electric
Externí odkaz:
http://arxiv.org/abs/2002.10786