A full alternative for the RTD quantum-inductance equivalent-circuit model

Autor: Kwaspen, J.J.M., Lepsa, M.I., Van De Roer, Th. G., Heyker, H.C., Van Der Vleuten, W.C.

Publikováno v: Proc. Gallium Arsenide and Related III-V Compounds Application Symposium 1998, GAAS 98, 373-378
STARTPAGE=373;ENDPAGE=378;TITLE=Proc. Gallium Arsenide and Related III-V Compounds Application Symposium 1998, GAAS 98
Kwaspen, J.J.M. ; Lepsa, M.I. ; van de Roer, Th. G. ; Heyker, H.C. ; van der Vleuten, W.C. (1998) A full alternative for the RTD quantum-inductance equivalent-circuit model. In: Gallium Arsenide Applications Symposium. GAAS 1998, 5-6 October 1998, Amsterdam, The Netherlands.

Under specific conditions, the small-signal series/parallel double-RC equivalent-network is a novel full mutual alternative for the resonant tunnelling diode quantum-inductance circuit model. Network optimisations to accurately match measured intrins

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f5e97fb7890f4272cc5a0027adb3d8c9
https://research.tue.nl/nl/publications/e19b856e-934d-4d26-a307-de3f34e89c8a

DX-Centers in Silicon δ-Doped GaAs and AlxGa1-xAs?

Autor: Koenraad, Paul M., de Lange, W., Blom, F.A.P., Leys, M.R., Perenboom, J.A.A.J., Singleton, J., van der Vleuten, W.C., Wolter, J.

Publikováno v: Materials Science Forum; January 1991, Vol. 65 Issue: 1 p461-466, 6p

Luminescence of a Delta Doping Related Exciton in GaAs:Si

Autor: Henning, J.C.M., Kessener, Y.A.R.R., Koenraad, Paul M., Leys, M.R., van der Vleuten, W.C., Wolter, J.H., Frens, A.M.

Publikováno v: Materials Science Forum; October 1993, Vol. 143 Issue: 1 p653-656, 4p

A MBE-grown high-efficiency GaAs solar cell with a directly deposited aluminum front contact.

Autor: Ragay, F.W., Leys, M.R., Nouwens, P.A.M., van der Vleuten, W.C., Wolter, J.H.

Publikováno v: IEEE Electron Device Letters; 1992, Vol. 13 Issue 12, p618-620, 3p

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