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Real time spectroscopic ellipsometry on ultrathin (<50 Å) hydrogenated amorphous silicon films on Si(100) and GaAs(100).

Autor: van den Oever, P. J., van de Sanden, M. C. M., Kessels, W. M. M.

Publikováno v: Journal of Applied Physics; 6/15/2007, Vol. 101 Issue 12, p123529, 10p, 1 Chart, 5 Graphs

Density and production of NH and NH2 in an Ar–NH3 expanding plasma jet.

Autor: van den Oever, P. J., van Helden, J. H., Lamers, C. C. H., Engeln, R., Schram, D. C., van de Sanden, M. C. M., Kessels, W. M. M.

Publikováno v: Journal of Applied Physics; 11/1/2005, Vol. 98 Issue 9, p093301, 10p, 1 Diagram, 1 Chart, 5 Graphs

The a-Si:H growth mechanism

Autor: Kessels, W. M.M., Barrell, Y., Van den Oever, P. J., Hoefnagels, J. P.M., Van de Sanden, M. C.M., Abelson, J.R.

Publikováno v: Amorphous and nanocrystalline silicon-based films-2003 : symposium held April 22-25, 2003, San Francisco, California, U.S.A, 431-436
STARTPAGE=431;ENDPAGE=436;TITLE=Amorphous and nanocrystalline silicon-based films-2003 : symposium held April 22-25, 2003, San Francisco, California, U.S.A

We report on two experimental studies carried out to reveal insight into the interaction of SiH3 radicals with the a-Si:H surface as assumed essential in the a-Si:H growth mechanism. The surface reaction probability β of SiH3 on the a-Si:H has been

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::59179de762d3f3d8921dc1a5f8a08269
https://research.tue.nl/en/publications/56c9a809-d4d7-4bd0-b74a-2238eaef6ff5

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