Zobrazeno 1 - 10
of 31
pro vyhledávání: '"van Wanum, M."'
Publikováno v:
8th European Microwave Week EUMW, 13th European Gallium Arsenide and Other Compound Semiconductors Application Symposium, GAAS 2005, 3-7 october 2005, Paris, France
de Hek, A.P. ; van der Bent, G. ; van Wanum, M. ; van Vliet, F.E. (2005) A cost-effective 10 Watt X-band high power amplifier and 1 watt driver amplifier chip-set. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.
de Hek, A.P. ; van der Bent, G. ; van Wanum, M. ; van Vliet, F.E. (2005) A cost-effective 10 Watt X-band high power amplifier and 1 watt driver amplifier chip-set. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.
An X-band power amplifier chip-set for communication and radar applications has been developed and tested. The chip set consists of a two- and three-stage high-power amplifier, which have an output power of 10 Watt over the 8.5 – 10.5 GHz frequency
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::916564f8fa3cd3e2270095cf270470de
http://resolver.tudelft.nl/uuid:b154d79f-b5fb-43aa-9947-f61d4bc6fc24
http://resolver.tudelft.nl/uuid:b154d79f-b5fb-43aa-9947-f61d4bc6fc24
Publikováno v:
van der Graaf, M.W. ; van Wanum, M. ; Maas, A.P.M. ; Suijker, E.M. ; Knight, A. ; Ludwig, M. (2003) L-Band MMICs for Space-based SAR system. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.
The design and performance of an L-Band GaAs chip-set is presented.The chip-set consists of a 6-bit attenuator circuit,a Low-Noise Amplifier (LNA)and a Multi Function Chip that is the combination of a 6-bit attenuator and 6-bit Phase shifter circuit.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8d4032e2299e8752900dd047630d152b
http://amsacta.unibo.it/552/
http://amsacta.unibo.it/552/
Publikováno v:
van Vliet, F.E. ; van Wanum, M. ; Roodnat, A.W. ; Alfredson, M. (2003) Fully-integrated wideband TTD core chip with serial control. In: Gallium Arsenide applications symposium. GAAS 2003, 6-10 October 2003, Munich.
The design and performance of a fully-integrated wideband TTD core chip is presented. The integration philosophy is discussed. The MMIC presented integrates 7-bit amplitude and 6-bit time-delay, as well as the control functions of a transmit/receive
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3d7db77372783b44abf4fca5290df31d
http://amsacta.unibo.it/470/
http://amsacta.unibo.it/470/
Publikováno v:
de Boer, A. ; Hoogland, J.A. ; Suijker, E.M. ; van Wanum, M. ; van Vliet, F.E. (2002) Highly-Integrated X-band Multi-function MMIC with Integrated LNA and Driver Amplifier. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.
European Microwave Week 2002-EuMW 2002-Proceedings of the 10th European Gallium Arsenide and other semiconductors Application Symposium-GAAS 2002, 23-24 September 2002, Fiera de Milano, Italy., 4 p.
European Microwave Week 2002-EuMW 2002-Proceedings of the 10th European Gallium Arsenide and other semiconductors Application Symposium-GAAS 2002, 23-24 September 2002, Fiera de Milano, Italy., 4 p.
The design and performønce of a highly integrated X-band multi-function MMIC with integrated LNA and high output power wìll be discussed, The MMIC integrates all the control functions of a lransmit/receive module, The integralion of a Low Noise Amp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d1fbc7e48e1bfad98e599906febb8aaa
http://amsacta.unibo.it/121/
http://amsacta.unibo.it/121/
Publikováno v:
European Microwave Week 2002-EuMW 2002-Proceedings of the 10th European Gallium Arsenide and other semiconductors Application Symposium-GAAS 2002, 23-24 September 2002, Fiera de Milano, Italy., 6 p.
van Wanum, M. ; van der Graaf, M.W. ; Hoogland, J.A.H. ; van Heijningen, M. (2002) Dual Transimpedance Amplifier for 43 Gbps applications. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.
van Wanum, M. ; van der Graaf, M.W. ; Hoogland, J.A.H. ; van Heijningen, M. (2002) Dual Transimpedance Amplifier for 43 Gbps applications. In: Gallium Arsenide applications symposium. GAAS 2002, 23-27 september 2002, Milano.
A 3-stage dual TransImpedance Amplifier (TIA) on one 2x1.8 mm 2 GaAs chip with 0.2 µm pHEMT technology has been designed for fiberoptic communication applications. It uses cascode connected common source FETs in a Constant-K configuration. The opera
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d44a1dccc6bd61137df92cb2a4b1dc63
Autor:
Suijker, E. M., Bolt, R. J., van Wanum, M., van Heijningen, M., Maas, A. P. M., van Vliet, F. E.
Publikováno v:
2014 11th European Radar Conference; 2014, p455-458, 4p
Publikováno v:
2014 44th European Microwave Conference; 2014, p1758-1761, 4p
Publikováno v:
2013 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS); 2013, p1-4, 4p
Publikováno v:
2009 European Microwave Integrated Circuits Conference (EuMIC); 2009, p294-297, 4p
Publikováno v:
2009 European Microwave Integrated Circuits Conference (EuMIC); 2009, p29-32, 4p