Zobrazeno 1 - 10
of 48
pro vyhledávání: '"van Troeye, Benoit"'
Autor:
Soulié, Jean-Philippe, Sankaran, Kiroubanand, Van Troeye, Benoit, Leśniewska, Alicja, Pedreira, Olalla Varela, Oprins, Herman, Delie, Gilles, Fleischmann, Claudia, Boakes, Lizzie, Rolin, Cédric, Ragnarsson, Lars-Åke, Croes, Kristof, Park, Seongho, Swerts, Johan, Pourtois, Geoffrey, Tőkei, Zsolt, Adelmann, Christoph
Interconnect resistance and reliability have emerged as critical factors limiting the performance of advanced CMOS circuits. With the slowdown of transistor scaling, interconnect scaling has become the primary driver of continued circuit miniaturizat
Externí odkaz:
http://arxiv.org/abs/2406.09106
Autor:
Torsi, Riccardo, Munson, Kyle T., Pendurthi, Rahul, Marques, Esteban A., Van Troeye, Benoit, Huberich, Lysander, Schuler, Bruno, Feidler, Maxwell A., Wang, Ke, Pourtois, Geoffrey, Das, Saptarshi, Asbury, John B., Lin, Yu-Chuan, Robinson, Joshua A.
Substitutionally-doped 2D transition metal dichalcogenides are primed for next-generation device applications such as field effect transistors (FET), sensors, and optoelectronic circuits. In this work, we demonstrate substitutional Rhenium (Re) dopin
Externí odkaz:
http://arxiv.org/abs/2302.00110
Autor:
Sheremetyeva, Natalya, Lamparski, Michael, Daniels, Colin, Van Troeye, Benoit, Meunier, Vincent
The vibrational properties of twisted bilayer graphene (tBLG) show complex features, due to the intricate energy landscape of its low-symmetry configurations. A machine learning-based approach is developed to provide a continuous model between the tw
Externí odkaz:
http://arxiv.org/abs/2007.03839
Autor:
Gadelha, Andreij C., Ohlberg, Douglas A. A., Rabelo, Cassiano, Neto, Eliel G. S., Vasconcelos, Thiago L., Campos, João L., Lemos, Jessica S., Ornelas, Vinícius, Miranda, Daniel, Nadas, Rafael, Santana, Fabiano C., Watanabe, Kenji, Taniguchi, Takashi, van Troeye, Benoit, Lamparski, Michael, Meunier, Vincent, Nguyen, Viet-Hung, Paszko, Dawid, Charlier, Jean-Christophe, Campos, Leonardo C., Cançado, Luiz G., Medeiros-Ribeiro, Gilberto, Jorio, Ado
A low twist angle between the two stacked crystal networks in bilayer graphene enables self-organized lattice reconstruction with the formation of a periodic domain. This superlattice modulates the vibrational and electronic structures, imposing new
Externí odkaz:
http://arxiv.org/abs/2006.09482
The phonon spectra of twisted bilayer graphene (tBLG) are analyzed for a series of 692 twisting angle values in the $[0,30{\degree}]$ range. The evolution of the phonon bandstructure as a function of twist angle is examined using a band unfolding sch
Externí odkaz:
http://arxiv.org/abs/1912.12568
Autor:
Van Troeye, Benoit, Lherbier, Aurélien, Dubois, Simon M. -M., Charlier, Jean-Christophe, Gonze, Xavier
The emergence of superconductivity in slightly-misaligned graphene bilayer [1] and moir\'e excitons in MoSe$_2$-WSe$_2$ van der Waals (vdW) heterostructures [2] is intimately related to the formation of a 2D superlattice in those systems. At variance
Externí odkaz:
http://arxiv.org/abs/1911.06846
Autor:
Pike, Nicholas A., Dewandre, Antoine, Van Troeye, Benoit, Gonze, Xavier, Verstraete, Matthieu J.
Publikováno v:
Phys. Rev. Materials 3, 074009 (2019)
First-principles studies of two-dimensional transition metal dichalcogenides have contributed considerably to the understanding of their dielectric, optical, elastic, and vibrational properties. The majority of works to date focus on a single materia
Externí odkaz:
http://arxiv.org/abs/1903.10179
Autor:
Pike, Nicholas A., Dewandre, Antoine, Van Troeye, Benoit, Gonze, Xavier, Verstraete, Matthieu J.
Publikováno v:
Phys. Rev. Materials 2, 063608 (2018)
Interest in the bulk transition metal dichalcogenides for their electronic, photovoltaic, and optical properties has grown and led to their use in many technological applications. We present a systematic investigation of their interlinked vibrational
Externí odkaz:
http://arxiv.org/abs/1804.02196
Autor:
Van Troeye, Benoit, van Setten, Michiel Jan, Giantomassi, Matteo, Torrent, Marc, Rignanese, Gian-Marco, Gonze, Xavier
Publikováno v:
B. Van Troeye, M. J. van Setten, M. Giantomassi, M. Torrent, G.-M. Rignanese, and X. Gonze, Phys. Rev. B 95, 024112 (2017)
Using density functional theory (DFT) and density functional perturbation theory (DFPT), we investigate the stability and response functions of CsH$_2$PO$_4$, a ferroelectric material at low temperature. This material cannot be described properly by
Externí odkaz:
http://arxiv.org/abs/1801.08756
Publikováno v:
Phys. Rev. B 93, 144304 (2016)
Grimme's DFT-D dispersion contribution to interatomic forces constants, required for the computation of the phonon band structures in density-functional perturbation theory, has been derived analytically. The implementation has then been validated wi
Externí odkaz:
http://arxiv.org/abs/1801.08741