Výsledky vyhledávání - "van Treeck, David"

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Sequential directional deposition of one-sided (In,Ga)N shells on GaN nanowires by molecular beam epitaxy

Autor: van Treeck, David, Lähnemann, Jonas, Gao, Guanhui, Garrido, Sergio Fernández, Brandt, Oliver, Geelhaar, Lutz

Publikováno v: APL Materials 11, 091120 (2023)

Capitalizing on the directed nature of the atomic fluxes in molecular beam epitaxy, we propose and demonstrate the sequential directional deposition of lateral (In,Ga)N shells on GaN nanowires. In this approach, a sub-monolayer thickness of each cons

Externí odkaz: http://arxiv.org/abs/2307.11235

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Growth mechanisms in molecular beam epitaxy for GaN-(In,Ga)N core-shell nanowires emitting in the green spectral range

Autor: van Treeck, David, Lähnemann, Jonas, Brandt, Oliver, Geelhaar, Lutz

Publikováno v: Nanotechnology 34, 485603 (2023)

Using molecular beam epitaxy, we demonstrate the growth of (In,Ga)N shells emitting in the green spectral range around very thin (35 nm diameter) GaN core nanowires. These GaN nanowires are obtained by self-assembled growth on TiN. We present a quali

Externí odkaz: http://arxiv.org/abs/2306.12787

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X-ray scattering study of GaN nanowires grown on Ti/Al$_{2}$O$_{3}$ by molecular beam epitaxy

Autor: Kaganer, Vladimir M., Konovalov, Oleg V., Calabrese, Gabriele, van Treeck, David, Kwasniewski, Albert, Richter, Carsten, Fernández-Garrido, Sergio, Brandt, Oliver

Publikováno v: J. Appl. Cryst. 56, 439-448 (2023)

GaN nanowires (NWs) grown by molecular beam epitaxy on Ti films sputtered on Al$_{2}$O$_{3}$ are studied by X-ray diffraction (XRD) and grazing incidence small-angle X-ray scattering (GISAXS). XRD, performed both in symmetric Bragg reflection and at

Externí odkaz: http://arxiv.org/abs/2207.04817

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Electroluminescence and current-voltage measurements of single (In,Ga)N/GaN nanowire light-emitting diodes in the nanowire ensemble

Autor: van Treeck, David, Ledig, Johannes, Scholz, Gregor, Lähnemann, Jonas, Musolino, Mattia, Tahraoui, Abbes, Brandt, Oliver, Waag, Andreas, Riechert, Henning, Geelhaar, Lutz

Publikováno v: Beilstein J. Nanotechnol. 10, 1177 (2019)

We present the combined analysis of the electroluminescence (EL) as well as the current-voltage (I-V) behavior of single, freestanding (In,Ga)N/GaN nanowire (NW) light-emitting diodes (LEDs) in an unprocessed, self-assembled ensemble grown by molecul

Externí odkaz: http://arxiv.org/abs/1908.08863

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Influence of the source arrangement on shell growth around GaN nanowires in molecular beam epitaxy

Autor: van Treeck, David, Fernández-Garrido, Sergio, Geelhaar, Lutz

Publikováno v: Phys. Rev. Materials 4, 013404 (2020)

In a combined experimental and theoretical study, we investigate the influence of the material source arrangement in a molecular beam epitaxy (MBE) system on the growth of nanowire (NW) core-shell structures. In particular, we study the shell growth

Externí odkaz: http://arxiv.org/abs/1907.10358

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Self-Assembled formation of long, thin, and uncoalesced GaN nanowires on crystalline TiN films

Autor: van Treeck, David, Calabrese, Gabriele, Goertz, Jelle J. W., Kaganer, Vladimir M., Brandt, Oliver, Fernández-Garrido, Sergio, Geelhaar, Lutz

Publikováno v: Nano Research, Volume 11, Issue 1, 565 (2018)

We investigate in detail the self-assembled nucleation and growth of GaN nanowires by molecular beam epitaxy on crystalline TiN films. We demonstrate that this type of substrate allows the growth of long and thin GaN nanowires that do not suffer from

Externí odkaz: http://arxiv.org/abs/1801.02966

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Dissertation/ Thesis

Growth of axial and core-shell (In,Ga)N/GaN heterostructures on GaN nanowires on TiN

Autor: van Treeck, David

In dieser Arbeit werden das Wachstum und die optischen Eigenschaften von selbstorganisierten GaN Nanodrähten auf TiN und nanodrahtbasierten (In,Ga)N/GaN Heterostrukturen für LED Anwendungen untersucht. Zu diesem Zweck wird das selbstorganisierte Wa

Externí odkaz: http://edoc.hu-berlin.de/18452/25322

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