Výsledky vyhledávání - "van Racmm René Swaaij"

High-rate deposition of microcrystalline silicon with an expanding thermal plasma

Autor: A.M.H.N. Petit, D. L. Williamson, C Chiel Smit, A Arjen Klaver, BA Bas Korevaar, van Racmm René Swaaij, van de Mcm Richard Sanden

Publikováno v: Thin Solid Films, 491(1-2), 280-293. Elsevier

Hydrogenated microcrystalline silicon has been deposited at elevated deposition rates using an expanding thermal plasma for the decomposition of the precursor gas silane (SiH 4 ). An extensive survey of the influence of the deposition parameters on t

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d89ca9393a3cc60afca97af05693f930
https://doi.org/10.1016/j.tsf.2005.06.032

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The role of the silyl radical in plasma deposition of microcrystalline silicon

Autor: C Chiel Smit, Eag Hamers, van Racmm René Swaaij, van de Mcm Richard Sanden

Publikováno v: Journal of Applied Physics, 96(8), 4076-4083. American Institute of Physics

Expanding thermal plasma chemical-vapor deposition has been used to deposit microcrystalline silicon films. We studied the behavior of the refractive index, crystalline fraction, and growth rate as a function of the silane (SiH4) flow close to the tr

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e224c864bb54371a8cd80d71017527e0
https://doi.org/10.1063/1.1790577

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Determining the material structure of microcrystalline silicon from Raman spectra

Autor: van Racmm René Swaaij, C Chiel Smit, van de Mcm Richard Sanden, H Donker, A.M.H.N. Petit, Wmm Erwin Kessels

Publikováno v: Journal of Applied Physics, 94(5), 3582-3588. American Institute of Physics

An easy and reliable method to extract the crystalline fractions in microcrystalline films is proposed. The method is shown to overcome, in a natural way, the inconsistencies that arise from the regular peak fitting routines. We subtract a scaled Ram

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bcc100b8286cf84463e2730bd4a7c05f
https://doi.org/10.1063/1.1596364

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Fast deposition of microcrystalline silicon with an expanding thermal plasma

Autor: BA Bas Korevaar, van de Mcm Richard Sanden, van Racmm René Swaaij, Eag Hamers, C Chiel Smit

Publikováno v: 4th Semiconductor Advances for Future Electronics (SAFE 2001), 182-185
STARTPAGE=182;ENDPAGE=185;TITLE=4th Semiconductor Advances for Future Electronics (SAFE 2001)
Journal of Non-Crystalline Solids, 299-302(1), 98-102. Elsevier

Microcrystalline silicon has been deposited using an expanding thermal plasma. High deposition rates are achieved, which is attractive for solar cell production. A first survey of the influence of the deposition parameters on the optical, electrical

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::dc5137ca9f0780723139c1fe50b971d0
https://doi.org/10.1016/s0022-3093(01)01184-x

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Influence of transparent conductive oxides on passivation of a-Si:H/c-Si heterojunctions as studied by atomic layer deposited Al-doped ZnO

Autor: Bart Macco, Sjoerd Smit, Dimitrios Deligiannis, Miro Zeman, van Racmm René Swaaij, Wmm Erwin Kessels

Publikováno v: Semiconductor Science and Technology, 29(12), 122001-1/5. Institute of Physics

In silicon heterojunction solar cells, the main opportunities for efficiency gain lie in improvements of the front-contact layers. Therefore, the effect of transparent conductive oxides (TCOs) on the a-Si:H passivation performance has been investigat

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::460fb3bca2b5a0a58b821eefdab1f44c
https://research.tue.nl/nl/publications/2fe3bdde-43b3-4492-81ce-6739aa87098e

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Hydrogenated amorphous silicon deposited under accurately controlled ion bombardment using pulse-shaped substrate biasing

Autor: Miro Zeman, van Racmm René Swaaij, van de Mcm Richard Sanden, P Pavel Kudlacek, MA Wank

Publikováno v: Journal of Applied Physics, 108(10):103304, 103304-1/9. American Institute of Physics
Journal of Applied Physics, 108 (10), 2010

We have applied pulse-shaped biasing to the expanding thermal plasma deposition of hydrogenated amorphous silicon at substrate temperatures ? 200?°C and growth rates around 1 nm/s. Substrate voltage measurements and measurements with a retarding fie

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2ee109453a373c340f7304f887419f1e
https://research.tue.nl/nl/publications/68c47671-5245-4985-b249-8ef0de18ad94

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Influence of hydrogen dilution on surface roughness development of a-Si:H thin films grown by remote plasma deposition

Autor: van Racmm René Swaaij, Miro Zeman, Frans D. Tichelaar, MA Wank, van de Mcm Richard Sanden, Andrea Illiberi

Publikováno v: Physica Status Solidi C: Conferences, 7(3-4), 571-574. Wiley-VCH Verlag

Hydrogenated amorphous silicon (a-Si:H) films are grown at different hydrogen dilutions. For high dilutions we observe a discrepancy in the surface roughness analysis between real-time spectroscopic ellipsometry (RTSE) and atomic force microscopy (AF

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::700190dc459846a191cb21e79ff8ae13
https://research.tue.nl/nl/publications/89830cb0-1f38-4310-a0d7-200ca1911e7b

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New insights in microcrystalline silicon deposition with expanding thermal plasma chemical vapor deposition

Autor: R Jiménez Zambrano, C Chiel Smit, van de Mcm Richard Sanden, van Racmm René Swaaij

Publikováno v: Journal of Non-Crystalline Solids, 352(9-20), 933-936. Elsevier

We report on further insights in the microcrystalline silicon (μc-Si:H) deposition using expanding thermal plasma chemical vapor deposition. We have shown before that the refractive index at 2 eV of μc-Si:H layers increased if the silane (SiH4) was

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fa64cb5d390009f6799ae4bf87bd9c72
https://research.tue.nl/nl/publications/aa9902df-ab43-4886-94e6-bfa29b69fdda

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Importance of defect density near the p-i interface for a-Si:H solar cell performance

Autor: BA Bas Korevaar, C Chiel Smit, DC Daan Schram, van Racmm René Swaaij, van de Mcm Richard Sanden

Publikováno v: Amorphous and heterogeneous silicon-based films-2001 : symposium held [at the 2001 MRS spring meeting,] April 16-20, 2001, San Francisco, California, U.S.A.

A cascaded arc expanding thermal plasma is used to deposit intrinsic hydrogenated amorphous silicon at growth rates larger than 2 Å/s. Implementation into a single junction p-i-n solar cell resulted in initial efficiencies of ∼7%, although all the

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6cca0bd13e5622376815b21cc8ffd39b
https://research.tue.nl/nl/publications/6f04f7de-b4d9-4bcf-ab05-8d2aca8e31d0

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The effect of low frequency pulse-shaped substrate bias on the remote plasma deposition of a-Si : H thin films

Autor: Wmm Erwin Kessels, van Racmm René Swaaij, MA Wank, van de Mcm Richard Sanden, M. A. Blauw, Ina T. Martin

Publikováno v: Plasma Sources Science and Technology, 19(1), 015012-1/10. Institute of Physics

We have applied both sinusoidal and pulse-shaped rf substrate biasing techniques to the expanding thermal plasma deposition of hydrogenated amorphous silicon. Spectroscopic ellipsometry and Fourier transform infrared spectroscopy data demonstrate tha

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0e1b52f4df28ae1ee962a1ce7e3a5473
https://doi.org/10.1088/0963-0252/19/1/015012

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