Influence of Twinning on the Morphology of AgBr and AgCl Microcrystals

Autor: van Renterghem, W., Goessens, C., Schryvers, Dominique, van Landuyt, Joseph, Bollen, D., de Keyzer, R., van Roost, C.

Publikováno v: The journal of imaging science and technology

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::20c0505fa11c96071207b9c91e36a486
https://doi.org/10.2352/j.imagingsci.technol.2001.45.4.art00006

The influence of crystal thickness on the image tone

Autor: van Renterghem, W., Schryvers, Dominique, van Landuyt, Joseph, van Roost, C., de Keyzer, R.

Publikováno v: The journal of imaging science and technology

It is known that the neutral image tone of a developed photographic film becomes brownish when the thickness of the original silver halide tabular crystals is reduced. We investigate by electron microscopy to what extent the silver filament structure

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=od______2097::5ddd596d377813da9012147159eb6246
https://hdl.handle.net/10067/483840151162165141

Chemical and structural characterization of oxide precipitates in heavily boron doped silicon by infrared spectroscopy and transmission electron microscopy

Autor: De Gryse, O., Clauws, P., Vanhellemont, J., Lebedev, Oleg, van Landuyt, Joseph, Simoen, E., Claeys, C.

Publikováno v: Proceedings of the 7th International Symposium on High Purity Silicon held at the 202nd Meeting of the Electrochemical Society, October 20-25, 2002, Salt Lake City, Utah

Infrared absorption spectra of oxygen precipitates in boron doped silicon with a boron concentration between 10(17) and 10(19) cm(-3) are analyzed, applying the spectral function theory of the composite precipitates. The aspect ratio of the platelet

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=od______2097::040b53d998172787930c74d913e8d6ba
https://hdl.handle.net/10067/949500151162165141

HREM investigation of a Fe/GaN/Fe tunnel junction

Autor: Nistor, L., Bender, H., van Landuyt, Joseph, Nemeth, S., Boeve, H., De Boeck, J., Borghs, G.

Publikováno v: CONFERENCE SERIES-INSTITUTE OF PHYSICS

The structure of Fe/GaN/Fe ferromagnetic electrodes is studied by high resolution transmission electron microscopy. The layers grow epitaxially on the GaAs substrate with the top Fe layer 90degrees rotated compared to the bottom one. The interfaces a

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=od______2097::4ca2ab33ffe4cab8ed734a56fe548384
https://hdl.handle.net/10067/957150151162165141

Characterisation of the local stress induced by shallow trench isolation and CoSi2 silicidation

Autor: Stuer, C., Steegen, A., van Landuyt, Joseph, Bender, H., Maex, K.

Publikováno v: CONFERENCE SERIES-INSTITUTE OF PHYSICS

With further down-scaling below 0.25mum technologies, CoSi2 is replacing TiSi2 because of its superior formation chemistry on narrow lines and favourable stress behaviour. Shallow trench isolation (STI) is used as the isolation technique in these tec

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=od______2097::5ce43d8bcf44bd4b1d9b5fa182f70358
https://hdl.handle.net/10067/951630151162165141