Zobrazeno 1 - 4
of 4
pro vyhledávání: '"van Jwm Uffelen"'
Publikováno v:
Journal of Applied Physics. 79:1258-1266
When pumped with a 1.48 μm laser diode, Er‐implanted Al2O3 ridge waveguides emit a broad spectrum consisting of several distinct peaks having wavelengths ranging from the midinfrared (1.53 μm) to the visible (520 nm). In order to explain these ob
Autor:
MK Meint Smit, Albert Polman, Rjim Koper, van C Dam, van Jwm Uffelen, van den Gn Gerlas Hoven
Publikováno v:
Applied Physics Letters. 68:1886-1888
A 4 cm long Er‐doped Al2O3 spiral waveguide amplifier was fabricated on a Si substrate, and integrated with wavelength division multiplexers within a total area of 15 mm2. When pumped with 9 mW 1.48 μm light from a laser diode, the amplifier shows
Autor:
MK Meint Smit, Albert Polman, van Jwm Uffelen, YS Yok-Siang Oei, E. Snoeks, van den Gn Gerlas Hoven
Publikováno v:
Applied Physics Letters. 62:3065-3067
Al2O3 films on oxidized Si substrates were implanted with 800 keV Er ions to peak concentrations ranging from 0.01 to 1 at. %. The samples show relatively broad photoluminescence spectra centered at λ=1.533 μm, corresponding to intra‐4f transitio
Publikováno v:
Electronics Letters. 25:746-748
A new type of waveguide is proposed combining a low and a high ridge. Experiments at λ = 632.8 nm show an excess loss of 0.6 dB for a 90° bend with R = 50fim in SiO2 cladded Al2O3, and showing reduced scattering losses compared with a conventional