Zobrazeno 1 - 3
of 3
pro vyhledávání: '"van Hcm Eric Genuchten"'
Autor:
van Hcm Eric Genuchten, J.H. Blokland, PM Paul Koenraad, J. T. Devreese, Daniel Granados, Jan C. Maan, M Murat Bozkurt, Vladimir M. Fomin, V. N. Gladilin, Najm Niek Kleemans, Pcm Christianen, Alfonso G. Taboada, Jorge M. Garcia
Publikováno v:
Physical Review B, 80(15):155318, 155318-1/4. American Physical Society
Physical Review. B, Condensed Matter and Materials Physics, 80, 1-4
Physical Review. B, Condensed Matter and Materials Physics, 80, 15, pp. 1-4
Physical review : B : solid state
Digital.CSIC. Repositorio Institucional del CSIC
instname
Physical Review. B, Condensed Matter and Materials Physics, 80, 1-4
Physical Review. B, Condensed Matter and Materials Physics, 80, 15, pp. 1-4
Physical review : B : solid state
Digital.CSIC. Repositorio Institucional del CSIC
instname
We investigate the exciton energy level structure of a large ensemble of InAs/GaAs quantum rings by photoluminescence spectroscopy in magnetic fields up to 30 T for different excitation densities. The confinement of an electron and a hole in these ty
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e42c39b4ba47f8b4b820b0f259bcedf1
https://doi.org/10.1103/PhysRevB.80.155318
https://doi.org/10.1103/PhysRevB.80.155318
Autor:
Hai Lu, Joel W. Ager, Zuzanna Liliental-Weber, van Hcm Eric Genuchten, R. E. Jones, Eugene E. Haller, William J. Schaff, Kin Man Yu, Wladek Walukiewicz
Publikováno v:
Physica B: Condensed Matter, 401-402, 646-649. Elsevier
Transmission electron microscopy was applied to study structural changes of InN films grown by molecular beam epitaxy on c-sapphire substrates with a GaN buffer layer. The films were studied as-grown and also following by rapid thermal annealing, irr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4f7007b6bb443abdd5d2e55499012d7e
https://doi.org/10.1016/j.physb.2007.09.042
https://doi.org/10.1016/j.physb.2007.09.042
Autor:
R. E. Jones, S. X. Li, Wladek Walukiewicz, Zuzanna Liliental-Weber, Hai Lu, Joel W. Ager, van Hcm Eric Genuchten, William J. Schaff, Kin Man Yu, Eugene E. Haller
Publikováno v:
Applied Physics Letters, 90(16):162103, 162103-1/3. American Institute of Physics
Jones, R.E.; Li, S.X.; Haller, E.E.; van Genuchten, H.C.M.; Yu, K.M.; Ager III, J.W.; et al.(2007). High Electron Mobility InN. Lawrence Berkeley National Laboratory. Lawrence Berkeley National Laboratory: Lawrence Berkeley National Laboratory. Retrieved from: http://www.escholarship.org/uc/item/64p6b48n
Jones, R.E.; Li, S.X.; Haller, E.E.; van Genuchten, H.C.M.; Yu, K.M.; Ager III, J.W.; et al.(2007). High Electron Mobility InN. Lawrence Berkeley National Laboratory. Lawrence Berkeley National Laboratory: Lawrence Berkeley National Laboratory. Retrieved from: http://www.escholarship.org/uc/item/64p6b48n
Irradiation of InN films with 2 MeV He+ ions followed by thermal annealing below 500 °C creates films with high electron concentrations and mobilities, as well as strong photoluminescence. Calculations show that electron mobility in irradiated sampl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::76358119338b591bb5246fda575e731d
https://doi.org/10.1063/1.2722693
https://doi.org/10.1063/1.2722693