Zobrazeno 1 - 10
of 191
pro vyhledávání: '"van Gastel, R."'
Publikováno v:
J. Phys.: Condens. Matter 26 (2014) 442001
We have investigated the growth of Pt on Ge(110) using scanning tunneling microscopy and spectroscopy. The deposition of several monolayers of Pt on Ge(110) followed by annealing at 1100 K results in the formation of three-dimensional metallic Pt-Ge
Externí odkaz:
http://arxiv.org/abs/1706.00697
Publikováno v:
In Current Applied Physics December 2021 32:45-49
Autor:
van Gastel, R., N'Diaye, A. T., Wall, D., Coraux, J., Busse, C., Heringdorf, F. -J. Meyer zu, Buckanie, N., von Hoegen, M. Horn, Michely, T., Poelsema, B.
We have used Low Energy Electron Microscopy (LEEM) and Photo Emission Electron Microscopy (PEEM) to study and improve the quality of graphene films grown on Ir(111) using chemical vapor deposition (CVD). CVD at elevated temperature already yields gra
Externí odkaz:
http://arxiv.org/abs/0907.3580
Publikováno v:
Surf. Sci. 521, 10 (2002)
We have used the indium/copper surface alloy to study the dynamics of surface vacancies on the Cu(001) surface. Individual indium atoms that are embedded within the first layer of the crystal, are used as probes to detect the rapid diffusion of surfa
Externí odkaz:
http://arxiv.org/abs/cond-mat/0110656
Publikováno v:
Surf. Sci. 521, 26 (2002)
We develop a version of the vacancy mediated tracer diffusion model, which follows the properties of the physical system of In atoms diffusing within the top layer of Cu(001) terraces. This model differs from the classical tracer diffusion problem in
Externí odkaz:
http://arxiv.org/abs/cond-mat/0110657
Publikováno v:
Phys. Rev. Lett. 86, 1562 (2001)
We report scanning tunneling microscopy observations, which imply that all atoms in a close-packed copper surface move frequently, even at room temperature. Using a low density of embedded indium `tracer' atoms, we visualize the diffusive motion of s
Externí odkaz:
http://arxiv.org/abs/cond-mat/0009436
Publikováno v:
In Nuclear Inst. and Methods in Physics Research, B 1 February 2015 344:44-49
Autor:
Sikharulidze, I., van Gastel, R., Schramm, S., Abrahams, J.P., Poelsema, B., Tromp, R.M., van der Molen, S.J.
Publikováno v:
In Nuclear Inst. and Methods in Physics Research, A 2011 633 Supplement 1:S239-S242
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Publikováno v:
In Surface Science 2009 603(22):3292-3296