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pro vyhledávání: '"van Beveren, Laurens H. Willems"'
Autor:
Edmonds, Mark T., van Beveren, Laurens H. Willems, Ganesan, Kumar, Eikenberg, Nina, Cervenka, Jiri, Prawer, Steven, Ley, Lothar, Hamilton, Alex R., Pakes, Christopher I.
Magneto-transport measurements were performed on surface conducting hydrogen-terminated diamond (100) hall bars at temperatures between 0.1-5 K in magnetic fields up to 8T.
Comment: 2 pages Optoelectronic and Microelectronic Materials & Devices
Comment: 2 pages Optoelectronic and Microelectronic Materials & Devices
Externí odkaz:
http://arxiv.org/abs/1303.4796
Autor:
Eikenberg, Nina, Ganesan, Kumar, Lee, Kin Kiong, Edmonds, Mark T., van Beveren, Laurens H. Willems, Prawer, Steven
Using microwave-assisted plasma chemical vapour deposition (CVD) a layer of Nitrogen doped ultra-nano-crystalline diamond (N-UNCD) is deposited on top of a non-conducting diamond layer, which itself is situated on a Silicon wafer. This structure is t
Externí odkaz:
http://arxiv.org/abs/1303.3326
In this paper we present our progress towards the opto-electronic characterization of indium phosphide (InP) nanowire transistors at milli-Kelvin (mK) temperatures. First, we have investigated the electronic transport of the InP nanowires by current-
Externí odkaz:
http://arxiv.org/abs/1303.2771
Autor:
Nguyen, Thanh C., Qiu, Wanzhi, Altissimo, Matteo, Spizzirri, Paul G., van Beveren, Laurens H. Willems, Skafidas, Efstratios
Publikováno v:
Graphene, Carbon Nanotubes, and Nanostructures: Techniques and Applications, ISBN 9781466560567, CRC Press, Taylor & Francis Group. Published February 15, 2013 (http://www.crcpress.com/product/isbn/9781466560567)
In this chapter, silicon nanowires that are compatible with CMOS fabrication processes have been described. It has been shown that these nanowires can be functionalized by conjugating monoclonal antibodies to their surface in order to build sensitive
Externí odkaz:
http://arxiv.org/abs/1302.5460
Autor:
Van Beveren, Laurens H. Willems, Tan, Kuan Y., Lai, Nai-Shyan, Klochan, Oleh, Dzurak, Andrew S., Hamilton, Alex R.
Publikováno v:
Materials Science Forum Vol. 700, Advanced Materials and Nanotechnology (AMN-5), 2011 conference on, 93-95 (2012)
A common issue in low temperature measurements of enhancement-mode metal-oxide-semiconductor (MOS) field-effect transistors (FETs) in the low electron density regime is the high contact resistance dominating the device impedance. In that case a volta
Externí odkaz:
http://arxiv.org/abs/1110.1418
Publikováno v:
Optoelectronic and Microelectronic Materials and Devices (COMMAD), 2010 Conference on, 221-222 (2010)
We demonstrate radio frequency (RF) readout of electrically detected magnetic resonance in phosphorus-doped silicon metal-oxide field-effecttransistors (MOSFETs), operated at liquid helium temperatures. For the first time, the Si:P hyperfine lines ha
Externí odkaz:
http://arxiv.org/abs/1105.1235
Overlapping-gate architecture for silicon Hall bar MOSFET devices in the low electron density regime
Autor:
van Beveren, Laurens H. Willems, Tan, Kuan Y., Lai, Nai-Shyan, Dzurak, Andrew S., Hamilton, Alex R.
Publikováno v:
Appl. Phys. Lett. 97, 152102 (2010) (3 pages)
We report the fabrication and study of Hall bar MOSFET devices in which an overlapping-gate architecture allows four-terminal measurements of low-density 2D electron systems, while maintaining a high density at the ohmic contacts. Comparison with dev
Externí odkaz:
http://arxiv.org/abs/1009.3109
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