Screening in Graphene: Response to External Static Electric Field and an Image-Potential Problem

Autor: Godfrey Gumbs, Viatcheslav M. Silkin, Eugene Kogan

Publikováno v: Nanomaterials
Volume 11
Issue 6
Addi. Archivo Digital para la Docencia y la Investigación
instname
Nanomaterials, Vol 11, Iss 1561, p 1561 (2021)
Addi: Archivo Digital para la Docencia y la Investigación
Universidad del País Vasco

We present a detailed first-principles investigation of the response of a free-standing graphene sheet to an external perpendicular static electric field E. The charge density distribution in the vicinity of the graphene monolayer that is caused by E

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Perturbative Valence Charge Density of Trigonal Se and Te

Autor: C. Calandra, F. Nizzoli, Olmes Bisi, Carlo Maria Bertoni

Publikováno v: physica status solidi (b). 71:651-663

The electron valence charge density in Se and Te is calculated using perturbation theory to second order in an average form factor which accounts for the lion-locality of the pseudo-potential. The convergence of the perturbative expansion is tested a

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::155a37aaa81e900798cc109732b545b5
https://doi.org/10.1002/pssb.2220710227

A perturbative approach to the valence charge density in tetrahedrally bonded semiconductors

Autor: Carlo Maria Bertoni, C. Calandra, F. Nizzoli, Virginio Bortolani

An equation for the charge density in terms of the dielectric matrix of the crystal is used to study the valence electron distribution in covalent and partially ionic semiconductors. Through a perturbation expansion of the dielectric matrix in terms

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::00bb6334f353b8aa424da7950624b5f9
https://hdl.handle.net/11380/738105

Dielectric matrix and covalent charge distribution of silicon

Autor: E. Tosatti, C. Calandra, Carlo Maria Bertoni, Virginio Bortolani

The valence charge density associated with the nearly free electron dielectric matrix of silicon is computed. The part arising from the off-diagonal dielectric elements is shown to contain the effects of covalency, and displays the piling up of bondi

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::20a1f4e698ddc9722a0539e42ddb86b0
https://hdl.handle.net/11380/738094