Zobrazeno 1 - 10
of 117
pro vyhledávání: '"unijunction transistor"'
Akademický článek
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Publikováno v:
Technology Audit and Production Reserves, Vol 4, Iss 1(54), Pp 51-55 (2020)
The object of this research is all the semiconductor unijunction transistor device (UJT) parameters that affect its operation as1.67 kHz saw-tooth relaxation oscillator circuit under the influence of gamma-irradiation dose.Relaxation oscillators are
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2f568620237853397d40b36b9b563b2e
http://journals.uran.ua/tarp/article/view/210172
http://journals.uran.ua/tarp/article/view/210172
Autor:
Binhong Li, Alexander Zaslavsky, K. Xiao, Sorin Cristoloveanu, Y X Chen, Jing Wan, J. Liu, Fy. Liu
Publikováno v:
2020 IEEE 15th International Conference on Solid-State & Integrated Circuit Technology (ICSICT).
A unijunction transistor based on fully-depleted silicon-on-insulator substrate is proposed. The device structure is similar to a junction field effect transistor. By conducting the TCAD simulation, we observe sharp switching and large hysteresis in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9ea7157e138a93becde75d9d53ec4819
https://doi.org/10.1109/icsict49897.2020.9278352
https://doi.org/10.1109/icsict49897.2020.9278352
Publikováno v:
Technology audit and production reserves; Том 4, № 1(54) (2020): Industrial and technology systems; 51-55
Technology audit and production reserves; Том 4, № 1(54) (2020): Виробничо-технологічні системи; 51-55
Technology audit and production reserves; Том 4, № 1(54) (2020): Производственно-технологические системы; 51-55
Technology audit and production reserves; Том 4, № 1(54) (2020): Виробничо-технологічні системи; 51-55
Technology audit and production reserves; Том 4, № 1(54) (2020): Производственно-технологические системы; 51-55
The object of this research is all the semiconductor unijunction transistor device (UJT) parameters that affect its operation as 1.67 kHz saw-tooth relaxation oscillator circuit under the influence of gamma-irradiation dose. Relaxation oscillators ar
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=scientific_p::801aeb3923dcef6a1df430b07f7260e2
http://journals.uran.ua/tarp/article/view/210172
http://journals.uran.ua/tarp/article/view/210172
Publikováno v:
Radioelectronics and Communications Systems; Vol. 63 No. 7 (2020); 368-375
Radioelectronics and Communications Systems; Том 63 № 7 (2020); 368-375
Radioelectronics and Communications Systems; Том 63 № 7 (2020); 368-375
The possibility of sensitivity increasing of magnetic field sensors by combining different types of sensitive elements in one sensor circuit is experimentally investigated. For this purpose, four new sensor constructions are proposed: based on bridge
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8961399696b61497b6da13e852dc262a
http://radioelektronika.org/article/view/S0735272720070043
http://radioelektronika.org/article/view/S0735272720070043
Publikováno v:
Journal of Communications Technology and Electronics. 63:399-402
The possibility of increasing the sensitivity of radiation sensors based on the field effect transistors is experimentally studied. A bridge circuit connecting two transistors with positive sign of the radiation sensitivity and two transistors with n
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::935b9b6e017dbb07dc51fd577558bee4
https://doi.org/10.1134/s1064226918040137
https://doi.org/10.1134/s1064226918040137
Publikováno v:
AEU - International Journal of Electronics and Communications. 133:153666
An integrate–and–fire (I&F) electronic neuron model is investigated theoretically and experimentally. The circuit comprises a unijunction transistor, a capacitor, and two resistors. It exhibits the following properties: (a) generates short spikes
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7018912746c5626c0157a7717ecadeb2
https://doi.org/10.1016/j.aeue.2021.153666
https://doi.org/10.1016/j.aeue.2021.153666
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
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Publikováno v:
Sensor Electronics and Microsystem Technologies; Том 3, № 4 (2006); 28-30
Сенсорная электроника и микросистемные технологии; Том 3, № 4 (2006); 28-30
Сенсорна електроніка і мікросистемні технології; Том 3, № 4 (2006); 28-30
Сенсорная электроника и микросистемные технологии; Том 3, № 4 (2006); 28-30
Сенсорна електроніка і мікросистемні технології; Том 3, № 4 (2006); 28-30
Characteristics of the light converter with the frequency output on the base of the unijunction transistor were investigated. The field-effect transistor instead of resistor in the emitter circuit of the unijunction transistor was used for increase o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=scientific_p::4cf7cf97659b77eee656f6610aa6b72f
http://semst.onu.edu.ua/article/view/112797
http://semst.onu.edu.ua/article/view/112797
Publikováno v:
2017 2nd International Conference on Advanced Information and Communication Technologies (AICT).
The possibility of using a unijunction transistor in the relaxation generator circuit as a highly sensitive frequency transducer of temperature, light, magnetic field, pressure, concentration of gases and radiation level as a sensor for the end-devic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::db349134ef3090741c573d411f2cc432
https://doi.org/10.1109/aiact.2017.8020059
https://doi.org/10.1109/aiact.2017.8020059