Advances in ultrashallow doping of silicon

Autor: Chufan Zhang, Shannan Chang, Yaping Dan

Publikováno v: Advances in Physics: X, Vol 6, Iss 1 (2021)

Ultrashallow doping is required for both classical field-effect transistors in integrated circuits and revolutionary quantum devices in quantum computing. In this review, we give a brief overview on recent research advances in three technologies to f

Externí odkaz: https://doaj.org/article/00a242c8fd5f4e39b3c31983b4df995b

Nanometer-thin pure boron CVD layers as material barrier to Au or Cu metallization of Si

Autor: D. Thammaiah Shivakumar, Tihomir Knežević, Lis K. Nanver

Publikováno v: Shivakumar, D T, Knežević, T & Nanver, L K 2021, ' Nanometer-thin pure boron CVD layers as material barrier to Au or Cu metallization of Si ', Journal of Materials Science: Materials in Electronics, vol. 32, no. 6, pp. 7123-7135 . https://doi.org/10.1007/s10854-021-05422-7
Journal of Materials Science: Materials in Electronics, 32(6), 7123-7135. Springer

Metallization layers of aluminum, gold, or copper are shown to be protected from interactions with silicon substrates by thin boron layers grown by chemical-vapor deposition (CVD) at 450 °C. A 3-nm-thick B-layer was studied in detail. It formed the

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::58892b58c680f53128507fd0539cd3ac
https://doi.org/10.1007/s10854-021-05422-7

Limits on Thinning of Boron Layers With/Without Metal Contacting in PureB Si (Photo)Diodes

Autor: Erwin Hardeveld, Tomislav Suligoj, Xingyu Liu, Lis K. Nanver, Tihomir Knezevic

Publikováno v: IEEE electron device letters, 40(6):8686173, 858-861. IEEE

A little more than a monolayer-thick pure-boron (PureB) layer was deposited on silicon at 250 °C by chemical vapor deposition (CVD), forming junctions with low saturation current. They displayed the same efficient suppression of electron injection a

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6372318a1550437214f8376f13699cc5
https://doi.org/10.1109/led.2019.2910465

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Perimeter effects from interfaces in ultra-thin layers deposited on nanometer-deep p+n silicon junctions

Autor: Lis K. Nanver, Tihomir Knezevic, Tomislav Suligoj

Publikováno v: 2017 40th International Convention on Information and Communication Technology, Electronics and Microelectronics, MIPRO 2017-Proceedings, 72-76
STARTPAGE=72;ENDPAGE=76;TITLE=2017 40th International Convention on Information and Communication Technology, Electronics and Microelectronics, MIPRO 2017-Proceedings
MIPRO

Interface states at metal-semiconductor or semiconductor-semiconductor interfaces in ultra-thin layers deposited on nanometer-deep p+n silicon junctions that are contacted by metal, can be beneficial for suppressing the injection of majority carriers

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7f51a062c5c0237a1b9be8dec45933cb
http://www.scopus.com/inward/record.url?scp=85027696765&partnerID=8YFLogxK