Magnetotransport properties of (Ge,Mn) ferromagnetic semiconductor grown on GaAs(001) for spintronics

Autor: Yu, Ing-Song

Publikováno v: Matière Condensée [cond-mat]. Université Joseph-Fourier-Grenoble I, 2010. Français
Matière Condensée [cond-mat]. Université Joseph-Fourier-Grenoble I, 2010. Français. ⟨NNT : ⟩

By low temperature Molecular Beam Epitaxy (MBE), (Ge,Mn) thin films with ferromagnetic nanostructures are grown on two types of GaAs substrates: epiready GaAs(001) (Ga-GeMn) and GaAs(001) with amorphous As capping layer (As-GeMn). In the Ga-GeMn samp

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