Zobrazeno 1 - 10
of 90
pro vyhledávání: '"tunable RF circuits"'
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.
Memristors have been recently proposed as an alternative to incorporate switching along with traditional CMOS circuits. Adaptive impedance and frequency tuning are an essential and challenging aspect in communication system design. To enable both, a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1c350a133101a56bbfb26eb35315e349
http://hdl.handle.net/2108/212317
http://hdl.handle.net/2108/212317
Publikováno v:
IEEE International Midwest Symposium on Circuits & Systems MWSCAS
IEEE International Midwest Symposium on Circuits & Systems MWSCAS, Aug 2018, Windsor, Canada
MWSCAS
2018 IEEE 61st International Midwest Symposium on Circuits and Systems (MWSCAS)
2018 IEEE 61st International Midwest Symposium on Circuits and Systems (MWSCAS), Aug 2018, Windsor, Canada. pp.917-920, ⟨10.1109/MWSCAS.2018.8624029⟩
IEEE International Midwest Symposium on Circuits & Systems MWSCAS, Aug 2018, Windsor, Canada
MWSCAS
2018 IEEE 61st International Midwest Symposium on Circuits and Systems (MWSCAS)
2018 IEEE 61st International Midwest Symposium on Circuits and Systems (MWSCAS), Aug 2018, Windsor, Canada. pp.917-920, ⟨10.1109/MWSCAS.2018.8624029⟩
Future wireless transceivers must support several communication standards with low-cost, low-area and low power consumption. In this letter, a novel wide tunable CMOS active inductor dedicated to RF circuits for multistandard applications is presente
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::82f44ee29ea04b2eaa232b91dba437e5
https://hal.archives-ouvertes.fr/hal-01895598
https://hal.archives-ouvertes.fr/hal-01895598
Publikováno v:
Saijets, J, Vähä-Heikkilä, T, Riekkinen, T & Mattila, T 2009, BST Varactors for Tunable RF Circuits . in Proceedigns of the 10th International Symposium on RF MEMS and RF Microsystems, MEMSWAVE 2009 . Fondazione Bruno Kessler, pp. 19-22, 10th International Symposium on RF MEMS and RF Microsystems, MEMSWAVE 2009, Trento, Italy, 6/07/09 .
This paper presents VTT's ferroelectric BST- varactor technology applicable to tunable components and circuits. As an example, a tunable stub resonator was designed, fabricated and characterized. A 40% capacitance tuning range results into a 25% shif
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=355e65625b88::c66f664c57040da5f63cf3d7b7b94fd5
https://cris.vtt.fi/en/publications/137710ba-f4ba-483c-b26e-81c99fadb0c5
https://cris.vtt.fi/en/publications/137710ba-f4ba-483c-b26e-81c99fadb0c5
This paper presents VTT's ferroelectric BST- varactor technology applicable to tunable components and circuits. As an example, a tunable stub resonator was designed, fabricated and characterized. A 40% capacitance tuning range results into a 25% shif
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dris___01229::29fc3fd920ee23dbab3664b31a670fe7
https://cris.vtt.fi/en/publications/137710ba-f4ba-483c-b26e-81c99fadb0c5
https://cris.vtt.fi/en/publications/137710ba-f4ba-483c-b26e-81c99fadb0c5
Autor:
Malallah, Yaaqoub Y.
Modern communication systems are evolving very quickly and tunable Radio Frequency (RF) components are needed to utilize the spectrum more effectively. Recent developments in small size and tunable microwave/RF components are attractive for communica
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5cb7fe5afb12106ea5d86abd85b4b425
Conference
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.
Design of GaN-based microwave components and application to novel high power reconfigurable antennas
Autor:
Hamdoun, Abdelaziz
Cette thèse démontre la faisabilité de l'utilisation de la technologie Nitrure de Gallium (GaN) dans les systèmes RF / micro-ondes reconfigurables. Les principales caractéristiques de ce type de technologie des semi-conducteurs se résident dans
Externí odkaz:
http://www.theses.fr/2016REN1S069/document
Autor:
Hamdoun, Abdelaziz
Publikováno v:
Electronics. Université de Rennes; Carleton university (Ottawa), 2016. English. ⟨NNT : 2016REN1S069⟩
Electronics. Université Rennes 1; Carleton university (Ottawa), 2016. English. ⟨NNT : 2016REN1S069⟩
Electronics. Université Rennes 1; Carleton university (Ottawa), 2016. English. ⟨NNT : 2016REN1S069⟩
This thesis demonstrates the feasibility of using the Gallium Nitride (GaN) technology in reconfigurable RF/microwave systems. The main features of this type of semiconductor technology being its high power with high efficiency. In addition, GaN tech
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::f8b32dc5b0120b61e98df62d14c5f8c0
https://theses.hal.science/tel-01453383
https://theses.hal.science/tel-01453383
Publikováno v:
Journal of Applied Physics; 2015, Vol. 117 Issue 17, p17B709-1-17B709-4, 4p, 4 Diagrams, 1 Chart, 2 Graphs
