High-Temperature Characterization of Multiple Silicon-Based Substrate for RF-IC Applications

Autor: Q. Courte, M. Rack, M. Nabet, P. Cardinael, J.-P. Raskin

Publikováno v: IEEE Journal of the Electron Devices Society, Vol 10, Pp 620-626 (2022)

This paper focuses on the comparison of various advanced substrates such as trap-rich (TR), porous silicon (PSi), gold-doped (Au-Si) and smart-implants PN-junction (DP) in terms of RF performances. Both small- and large-signal measurements were perfo

Externí odkaz: https://doaj.org/article/8bdd0f514f874ccfac535d801d7012c6

Post-process local porous silicon integration method for RF application

Autor: Scheen, Gilles, Tuyaerts, Romain, Rack, Martin, Nyssens, Lucas, Rasson, Jonathan, Raskin, Jean-Pierre, IEEE International Microwave Symposium – IMS’19

The interest of porous silicon (PSi) for RF applications has been widely demonstrated in many previous works. In most of them, PSi is integrated into the substrate during its fabrication (PRE-PSi) prior to a standard process (e.g. CMOS). Such PRE-PSi

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=od______1493::a1d2b6faab6c2b396175dba25ff1e5fc
https://hdl.handle.net/2078.1/220450

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A SPDT RF Switch Small- and Large-Signal Characteristics on TR-HR SOI Substrates

Autor: Martin Rack, Frederic Allibert, Jean-Pierre Raskin, Sergej Makovejev, Babak Kazemi Esfeh

Publikováno v: IEEE Journal of the Electron Devices Society, Vol. 6, no., p. 543-550 (2018)
IEEE Journal of the Electron Devices Society, Vol 6, Pp 543-550 (2018)

This paper evaluates the small- and large-signal characteristics of a single pole double thru (SPDT) RF antenna switch including its insertion loss, isolation and non-linear behavior. It is fabricated on three different types of high resistivity (HR)

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1a6d5190cfdbb0fe1c3348f258d1b40c
https://hdl.handle.net/2078.1/208830

A SPDT RF switch small- and large-signal characteristics on TR-HR SOI substrates

Autor: Kazemi Esfeh, Babak, Makovejev S., Allibert F., Raskin, Jean-Pierre, IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference

This paper evaluates the small- and large-signal characteristics of a single pole double thru (SPDT) RF antenna switch including its insertion loss, isolation and non-linear behavior. It is fabricated on two different types of high resistivity (HR) S

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=od______1493::9cfc2255e3feb58ea7dcbcda2977def9
https://hdl.handle.net/2078.1/219183