Zobrazeno 1 - 10
of 16
pro vyhledávání: '"te Velthuis SG"'
Autor:
Jiang W; Materials Science Division, Argonne National Laboratory, Lemont, IL 60439, USA., Upadhyaya P; Device Research Laboratory, Department of Electrical Engineering, University of California, Los Angeles, CA 90095, USA., Zhang W; Materials Science Division, Argonne National Laboratory, Lemont, IL 60439, USA., Yu G; Device Research Laboratory, Department of Electrical Engineering, University of California, Los Angeles, CA 90095, USA., Jungfleisch MB; Materials Science Division, Argonne National Laboratory, Lemont, IL 60439, USA., Fradin FY; Materials Science Division, Argonne National Laboratory, Lemont, IL 60439, USA., Pearson JE; Materials Science Division, Argonne National Laboratory, Lemont, IL 60439, USA., Tserkovnyak Y; Department of Physics and Astronomy, University of California, Los Angeles, CA 90095, USA., Wang KL; Device Research Laboratory, Department of Electrical Engineering, University of California, Los Angeles, CA 90095, USA., Heinonen O; Materials Science Division, Argonne National Laboratory, Lemont, IL 60439, USA. Department of Physics and Astronomy, Northwestern University, Evanston, IL 60208, USA. Northwestern-Argonne Institute of Science and Engineering, Northwestern University, Evanston, IL 60208, USA. Computation Institute, University of Chicago, Chicago, IL 60637, USA., te Velthuis SG; Materials Science Division, Argonne National Laboratory, Lemont, IL 60439, USA., Hoffmann A; Materials Science Division, Argonne National Laboratory, Lemont, IL 60439, USA. hoffmann@anl.gov.
Publikováno v:
Science (New York, N.Y.) [Science] 2015 Jul 17; Vol. 349 (6245), pp. 283-6. Date of Electronic Publication: 2015 Jun 11.
Autor:
Bi C; Department of Physics, University of Arizona, Tucson, Arizona 85721, USA., Liu Y; Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439, USA., Newhouse-Illige T; Department of Physics, University of Arizona, Tucson, Arizona 85721, USA., Xu M; Department of Physics, University of Arizona, Tucson, Arizona 85721, USA., Rosales M; Department of Physics, University of Arizona, Tucson, Arizona 85721, USA., Freeland JW; Advanced Photon Source, Argonne National Laboratory, Argonne, Illinois 60439, USA., Mryasov O; Department of Physics and Astronomy, University of Alabama, Tuscaloosa, Alabama 35487, USA., Zhang S; Department of Physics, University of Arizona, Tucson, Arizona 85721, USA., te Velthuis SG; Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439, USA., Wang WG; Department of Physics, University of Arizona, Tucson, Arizona 85721, USA.
Publikováno v:
Physical review letters [Phys Rev Lett] 2014 Dec 31; Vol. 113 (26), pp. 267202. Date of Electronic Publication: 2014 Dec 30.
Autor:
Cuellar FA; 1] GFMC, Departamento Fisica Aplicada III, Universidad Complutense Madrid, 28040 Madrid, Spain [2]., Liu YH; Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439, USA., Salafranca J; 1] GFMC, Departamento Fisica Aplicada III, Universidad Complutense Madrid, 28040 Madrid, Spain [2] Materials Science & Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA., Nemes N; GFMC, Departamento Fisica Aplicada III, Universidad Complutense Madrid, 28040 Madrid, Spain., Iborra E; GMME Departamento de Tecnologia Electronica, ETSIT, Universidad Politecnica de Madrid, 28040 Madrid, Spain., Sanchez-Santolino G; 1] GFMC, Departamento Fisica Aplicada III, Universidad Complutense Madrid, 28040 Madrid, Spain [2] Laboratorio de Heteroestructuras con aplicación en Spintronica, Unidad Asociada CSIC/Universidad Complutense Madrid, Sor Juana Inés de la Cruz, 3, ES-28049 Madrid, Spain., Varela M; 1] GFMC, Departamento Fisica Aplicada III, Universidad Complutense Madrid, 28040 Madrid, Spain [2] Materials Science & Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA., Garcia Hernandez M; 1] Laboratorio de Heteroestructuras con aplicación en Spintronica, Unidad Asociada CSIC/Universidad Complutense Madrid, Sor Juana Inés de la Cruz, 3, ES-28049 Madrid, Spain [2] Instituto de Ciencia de Materiales de Madrid, 28049 Madrid, Spain., Freeland JW; Advanced Photon Source, Argonne National Laboratory, Argonne, Illinois 60439, USA., Zhernenkov M; Los Alamos National Laboratory, Los Alamos, New Mexico 87545, USA., Fitzsimmons MR; Los Alamos National Laboratory, Los Alamos, New Mexico 87545, USA., Okamoto S; Materials Science & Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA., Pennycook SJ; Department of Materials Science and Engineering, The University of Tennessee, Knoxville, Tennessee 37996, USA., Bibes M; 1] Unité Mixte de Physique CNRS/Thales, 1 avenue Augustin Fresnel, Campus de l'Ecole Polytechnique, 91767 Palaiseau, France [2] Université Paris-Sud, 91905 Orsay, France., Barthélémy A; 1] Unité Mixte de Physique CNRS/Thales, 1 avenue Augustin Fresnel, Campus de l'Ecole Polytechnique, 91767 Palaiseau, France [2] Université Paris-Sud, 91905 Orsay, France., te Velthuis SG; Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439, USA., Sefrioui Z; 1] GFMC, Departamento Fisica Aplicada III, Universidad Complutense Madrid, 28040 Madrid, Spain [2] Laboratorio de Heteroestructuras con aplicación en Spintronica, Unidad Asociada CSIC/Universidad Complutense Madrid, Sor Juana Inés de la Cruz, 3, ES-28049 Madrid, Spain., Leon C; 1] GFMC, Departamento Fisica Aplicada III, Universidad Complutense Madrid, 28040 Madrid, Spain [2] Laboratorio de Heteroestructuras con aplicación en Spintronica, Unidad Asociada CSIC/Universidad Complutense Madrid, Sor Juana Inés de la Cruz, 3, ES-28049 Madrid, Spain., Santamaria J; 1] GFMC, Departamento Fisica Aplicada III, Universidad Complutense Madrid, 28040 Madrid, Spain [2] Laboratorio de Heteroestructuras con aplicación en Spintronica, Unidad Asociada CSIC/Universidad Complutense Madrid, Sor Juana Inés de la Cruz, 3, ES-28049 Madrid, Spain.
Publikováno v:
Nature communications [Nat Commun] 2014 Jun 23; Vol. 5, pp. 4215. Date of Electronic Publication: 2014 Jun 23.
Autor:
Liu Y; Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439, USA., Cuellar FA; GFMC, Departamento de Fisica Aplicada III, Universidad Complutense de Madrid, Campus Moncloa, ES-28040 Madrid, Spain., Sefrioui Z; GFMC, Departamento de Fisica Aplicada III, Universidad Complutense de Madrid, Campus Moncloa, ES-28040 Madrid, Spain., Freeland JW; Advanced Photon Source, Argonne National Laboratory, Argonne, Illinois 60439, USA., Fitzsimmons MR; Los Alamos National Laboratory, Los Alamos, New Mexico 87545, USA., Leon C; GFMC, Departamento de Fisica Aplicada III, Universidad Complutense de Madrid, Campus Moncloa, ES-28040 Madrid, Spain., Santamaria J; GFMC, Departamento de Fisica Aplicada III, Universidad Complutense de Madrid, Campus Moncloa, ES-28040 Madrid, Spain., te Velthuis SG; Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439, USA.
Publikováno v:
Physical review letters [Phys Rev Lett] 2013 Dec 13; Vol. 111 (24), pp. 247203. Date of Electronic Publication: 2013 Dec 11.
Autor:
Sun Y; Department of Physics, Colorado State University, Fort Collins, Colorado 80523, USA., Chang H; Department of Physics, Colorado State University, Fort Collins, Colorado 80523, USA., Kabatek M; Department of Physics, Colorado State University, Fort Collins, Colorado 80523, USA., Song YY; Department of Physics, Colorado State University, Fort Collins, Colorado 80523, USA., Wang Z; Department of Physics, Colorado State University, Fort Collins, Colorado 80523, USA., Jantz M; Department of Physics, Colorado State University, Fort Collins, Colorado 80523, USA., Schneider W; Department of Physics, Colorado State University, Fort Collins, Colorado 80523, USA., Wu M; Department of Physics, Colorado State University, Fort Collins, Colorado 80523, USA., Montoya E; Physics Department, Simon Fraser University, Burnaby, British Columbia, V5A 1S6, Canada., Kardasz B; Physics Department, Simon Fraser University, Burnaby, British Columbia, V5A 1S6, Canada., Heinrich B; Physics Department, Simon Fraser University, Burnaby, British Columbia, V5A 1S6, Canada., te Velthuis SG; Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439, USA., Schultheiss H; Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439, USA., Hoffmann A; Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439, USA.
Publikováno v:
Physical review letters [Phys Rev Lett] 2013 Sep 06; Vol. 111 (10), pp. 106601. Date of Electronic Publication: 2013 Sep 06.
Autor:
Zhu LY; Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439, USA., Liu Y, Bergeret FS, Pearson JE, te Velthuis SG, Bader SD, Jiang JS
Publikováno v:
Physical review letters [Phys Rev Lett] 2013 Apr 26; Vol. 110 (17), pp. 177001. Date of Electronic Publication: 2013 Apr 24.
Autor:
Liu Y; Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439, USA. yhliu@anl.gov, Visani C, Nemes NM, Fitzsimmons MR, Zhu LY, Tornos J, Garcia-Hernandez M, Zhernenkov M, Hoffmann A, Leon C, Santamaria J, te Velthuis SG
Publikováno v:
Physical review letters [Phys Rev Lett] 2012 May 18; Vol. 108 (20), pp. 207205. Date of Electronic Publication: 2012 May 18.
Autor:
Santos TS; Center for Nanoscale Materials, Argonne National Laboratory, Argonne, Illinois 60439, USA., Kirby BJ, Kumar S, May SJ, Borchers JA, Maranville BB, Zarestky J, te Velthuis SG, van den Brink J, Bhattacharya A
Publikováno v:
Physical review letters [Phys Rev Lett] 2011 Oct 14; Vol. 107 (16), pp. 167202. Date of Electronic Publication: 2011 Oct 12.
Autor:
Vorobiev A; Max-Planck-Institut für Metallforschung, Heisenbergstr. 3, 70569 Stuttgart, Germany. alexei.vorobiev@esrf.fr, Major J, Dosch H, Müller-Buschbaum P, Falus P, Felcher GP, te Velthuis SG
Publikováno v:
The journal of physical chemistry. B [J Phys Chem B] 2011 May 19; Vol. 115 (19), pp. 5754-65. Date of Electronic Publication: 2011 Apr 19.
Autor:
de la Venta J; Dpto. Fisica de Materiales, Universidad Complutense de Madrid, 28040 Madrid, Spain., Bouzas V, Pucci A, Laguna-Marco MA, Haskel D, te Velthuis SG, Hoffmann A, Lal J, Bleuel M, Ruggeri G, de Julián Fernández C, García MA
Publikováno v:
Journal of nanoscience and nanotechnology [J Nanosci Nanotechnol] 2009 Nov; Vol. 9 (11), pp. 6434-8.