Zobrazeno 1 - 10
of 680
pro vyhledávání: '"switched-current"'
Publikováno v:
IEEE Access, Vol 8, Pp 168589-168600 (2020)
This paper proposes a fourth-order (2-2) switched-current (SI) multistage-noise-shaping (MASH) delta-sigma modulator (DSM) with a simplified digital noise-cancellation circuit (DNCC) by using a Taiwan Semiconductor Manufacturing Company (TSMC) 0.18
Externí odkaz:
https://doaj.org/article/6d1e1b9f8039494dbce3a89efcc60aca
Publikováno v:
Dianzi Jishu Yingyong, Vol 44, Iss 10, Pp 37-40 (2018)
In order to meet the engineering application requirement for low-power and real-time signal processing, an implementation of wavelet transform using switched current(SI) technique is presented in this paper. The working principles of wavelet transfor
Externí odkaz:
https://doaj.org/article/90938c75c0d54de699f63d8ad7e0efb7
Publikováno v:
工程科学学报, Vol 39, Iss 7, Pp 1101-1106 (2017)
In order to improve the accuracy of switched current circuit fault diagnosis, a feature extraction and recognition method of switched current circuit based on wavelet packet optimization and optimization of BP neural network was proposed. Firstly, th
Externí odkaz:
https://doaj.org/article/413b2afe40334274861fd2ce415787a9
Publikováno v:
Radioengineering, Vol 18, Iss 3, Pp 295-299 (2009)
A new CMOS active mixer topology can operate at 1 V supply voltage by use of SCM (switched currentmirror). Such current-mode mixer requires less voltage headroom with good linearization. Mixing is achieved with four improved current mirrors, which ar
Externí odkaz:
https://doaj.org/article/5b3009fea6c84ea889c282307f58fe54
Autor:
J. Hospodka, L. Dolivka
Publikováno v:
Radioengineering, Vol 17, Iss 4, Pp 48-54 (2008)
This paper describes how analogue switched circuits (switched-capacitor and switched-current circuits) can be optimized by means of a personal computer. The optimization of this kind of circuits is not so common and their analysis is more difficult i
Externí odkaz:
https://doaj.org/article/265bf2dd6b7f4d28ad66371d525919b1
Autor:
Julius Wiesemann, Axel Mertens
Publikováno v:
IECON
This paper presents an active gate driver with variable gate resistance for use in SiC-driven inverters. Motivated by the negative effects that fast switching transients of SiC MOSFETs may have on the insulation and bearings of electrical machines, t
Publikováno v:
Songklanakarin Journal of Science and Technology (SJST), Vol 29, Iss 1, Pp 165-180 (2007)
A low-power low-error single-ended virtually-grounded-drain class AB switched-current memory cell is presented. The proposed circuit is relatively simple, based on a basic class AB SI memory cell and a levelshiftedgrounded-gate amplifier. No large di
Externí odkaz:
https://doaj.org/article/eba0c63b100342d3b6200fb6cebe4508
Akademický článek
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Publikováno v:
2020 22nd European Conference on Power Electronics and Applications (EPE'20 ECCE Europe).
This paper explores the turn-off switching behavior of a third-generation SiC MOSFET encapsulated in a TO-247-4 package. The work is focused on the selection of the optimal gate resistance to reduce the turn-off switching losses. The selection criter
Autor:
Bohumil Brtnik
Publikováno v:
Microelectronics Journal. 82:1-4
The most general parameter of the electronic circuit is its sensitivity. Sensitivity analysis helps circuit designers to determine boundaries to predict the variations that a particular design variable will generate in a target specifications, if it