Zobrazeno 1 - 10
of 34 917
pro vyhledávání: '"strain engineering"'
Autor:
Dong, Mingdong1,2,3,4 (AUTHOR), Zhang, Yichi1,2,3,4 (AUTHOR), Cao, Jing‐ming5 (AUTHOR), Chen, Haowen6 (AUTHOR), Lu, Qiyang6 (AUTHOR), Wang, Hong‐fei5 (AUTHOR), Wu, Jie1,2,3 (AUTHOR) wujie@westlake.edu.cn
Publikováno v:
Advanced Science. 10/28/2024, Vol. 11 Issue 40, p1-8. 8p.
Autor:
Yu, Yi, Ge, Junyu, Luo, Manlin, Seo, In Cheol, Kim, Youngmin, Eng, John J. H., Lu, Kunze, Wei, Tian-Ran, Gao, Weibo, Li, Hong, Nam, Donguk
Two-dimensional (2D) materials have emerged as promising candidates for next-generation integrated single-photon emitters (SPEs). However, significant variability in the emission energies of 2D SPEs presents a major challenge in producing identical s
Externí odkaz:
http://arxiv.org/abs/2410.17654
Autor:
Xuetian Gong, Chao Zhang, Dong Su, Wenrong Xiao, Fangjie Cen, Ying Yang, Shenglin Jiang, Jing Wang, Kanghua Li, Guangzu Zhang
Publikováno v:
Journal of Materiomics, Vol 10, Iss 6, Pp 1196-1205 (2024)
Dielectric capacitors with high power density and fast charge-discharge speed play an essential role in the development of pulsed power systems. The increased demands for miniaturization and practicality of pulsed power equipment also necessitate the
Externí odkaz:
https://doaj.org/article/d577b94dfbc84241aef50dfc7ed93ee2
The heavy-holes in Ge/GeSi heterostructures show highly anisotropic gyromagnetic response with in-plane $g$-factors $g_{x,y}^*\lesssim 0.3$ and out-of-plane $g$-factor $g_z^*\gtrsim 10$. As a consequence, Rabi hot spots and dephasing sweet lines are
Externí odkaz:
http://arxiv.org/abs/2407.19854
Autor:
E, Vipin K, Padhan, Prahallad
Thermoelectric properties in topological insulator Bi2Se3 are explored with multifaceted strategies, i.e., hybrid functional with strain and artificial intelligence methodology. The assessment with the experimental band gap values recognises the limi
Externí odkaz:
http://arxiv.org/abs/2407.19241
Autor:
Jaikissoon, Marc, Köroğlu, Çağıl, Yang, Jerry A., Neilson, Kathryn M., Saraswat, Krishna C., Pop, Eric
Strain engineering has played a key role in modern silicon electronics, having been introduced as a mobility booster in the 1990s and commercialized in the early 2000s. Achieving similar advances with two-dimensional (2D) semiconductors in a CMOS (co
Externí odkaz:
http://arxiv.org/abs/2405.09792
Autor:
Kumar, Ankit1 (AUTHOR), Xu, Lin1 (AUTHOR), Pal, Arnab1 (AUTHOR), Agashiwala, Kunjesh1 (AUTHOR), Parto, Kamyar1 (AUTHOR), Cao, Wei1 (AUTHOR), Banerjee, Kaustav1 (AUTHOR) kaustav@ece.ucsb.edu
Publikováno v:
Journal of Applied Physics. 9/7/2024, Vol. 136 Issue 9, p1-12. 12p.
Autor:
Andrade, Isaac M. Felix Fabiano M., Woellner, Cristiano F., Galvao, Douglas S., Tromer, Raphael M.
In the present work, we have carried out DFT simulations to investigate the electronic and optical properties of a porphyrin-based 2D crystal named 2D Diboron-Porphyrin (2DDP). We showed that it is possible to use strain to tune the 2DDP electronic p
Externí odkaz:
http://arxiv.org/abs/2405.16627
Autor:
Spirito, Davide, Barra-Burillo, María, Calavalle, Francesco, Manganelli, Costanza Lucia, Gobbi, Marco, Hillenbrand, Rainer, Casanova, Fèlix, Hueso, Luis E., Martín-García, Beatriz
Publikováno v:
Nano Lett. 2022, 22 (10), 4153-4160
Strain is an effective strategy to modulate the optoelectronic properties of 2D materials, but it has been almost unexplored in layered hybrid organic-inorganic metal halide perovskites (HOIPs) due to their complex band structure and mechanical prope
Externí odkaz:
http://arxiv.org/abs/2404.13560
Autor:
Huo, Zihao, Luo, Zhihui, Zhang, Peng, Yang, Aiqin, Liu, Zhengtao, Tao, Xiangru, Zhang, Zihan, Guo, Shumin, Jiang, Qiwen, Chen, Wenxuan, Yao, Dao-Xin, Duan, Defang, Cui, Tian
The recent transport measurement of La$_3$Ni$_2$O$_7$ uncover a "right-triangle" shape of the superconducting dome in the pressure-temperature (P-T) phase diagram. Motivated by this, we perform theoretical first-principles studies of La$_3$Ni$_2$O$_7
Externí odkaz:
http://arxiv.org/abs/2404.11001