Nanostructures Stacked on Hafnium Oxide Films Interfacing Graphene and Silicon Oxide Layers as Resistive Switching Media

Autor: Tauno Kahro, Kristina Raudonen, Joonas Merisalu, Aivar Tarre, Peeter Ritslaid, Aarne Kasikov, Taivo Jõgiaas, Tanel Käämbre, Markus Otsus, Jekaterina Kozlova, Harry Alles, Aile Tamm, Kaupo Kukli

Publikováno v: Nanomaterials, Vol 13, Iss 8, p 1323 (2023)

SiO2 films were grown to thicknesses below 15 nm by ozone-assisted atomic layer deposition. The graphene was a chemical vapor deposited on copper foil and transferred wet-chemically to the SiO2 films. On the top of the graphene layer, either continuo

Externí odkaz: https://doaj.org/article/a04d80afdb2a45dbada4cec7bab3baa9

Hafnium oxide/graphene/hafnium oxide-stacked nanostructures as resistive switching media

Autor: Aarne Kasikov, Taivo Jõgiaas, Aivar Tarre, Salvador Dueñas Carazo, Jekaterina Kozlova, T. Käämbre, María Helena Castán Lanaspa, Kaupo Kukli, Helle-Mai Piirsoo, Guillermo Vinuesa Sanz, Tauno Kahro, Peeter Ritslaid, Aile Tamm

Publikováno v: UVaDOC. Repositorio Documental de la Universidad de Valladolid
instname
UVaDOC: Repositorio Documental de la Universidad de Valladolid
Universidad de Valladolid

Producción Científica
Thin HfO2 films were grown by atomic layer deposition on chemical vapor-deposited large-area graphene. The graphene was transferred, prior to the deposition of the HfO2 overlayer, to the HfO2 bottom dielectric layer pregr

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::261de93b35baa23df4dbeb075fff4e8c
http://uvadoc.uva.es/handle/10324/46600

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