Zobrazeno 1 - 10
of 246
pro vyhledávání: '"spin-orbit torque (SOT)"'
Publikováno v:
Advanced Science, Vol 11, Iss 34, Pp n/a-n/a (2024)
Abstract Antiferromagnets are competitive candidates for the next generation of spintronic devices owing to their superiority in small‐scale and low‐power‐consumption devices. The electrical manipulation of the magnetization and exchange bias (
Externí odkaz:
https://doaj.org/article/e733f4eb8bfc49e280e36752e8bf2e21
Autor:
Yuya Fujiwara, Takayuki Kawahara
Publikováno v:
IEEE Access, Vol 12, Pp 150962-150974 (2024)
To build Neural Networks (NNs) on edge devices, Binarized Neural Network (BNN) has been proposed on the software side, while Computing-in-Memory (CiM) architecture has been proposed on the hardware side. For use on CiM architecture-based BNN, Magneti
Externí odkaz:
https://doaj.org/article/9f62b4a18cf14024a7359545cb7cc2f8
Publikováno v:
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, Vol 10, Pp 13-21 (2024)
While magnetic random-access memories (MRAMs) are promising because of their nonvolatility, relatively fast speeds, and high endurance, there are major challenges in adopting them for the advanced technology nodes. One of the major challenges in scal
Externí odkaz:
https://doaj.org/article/c57ce292b48d402b8edde7ca486724fd
Publikováno v:
IEEE Open Journal of Nanotechnology, Vol 4, Pp 102-108 (2023)
Convolutional neural networks (CNNs) offer potentially a better accuracy alternative for conventional deep learning tasks. The hardware implementation of CNN functionalities with conventional CMOS based devices still lags in area and energy efficienc
Externí odkaz:
https://doaj.org/article/3b79da1c8f5e4dac9efa70eee02685cb
Publikováno v:
IEEE Access, Vol 11, Pp 8150-8158 (2023)
The globalization of the Integrated Circuits supply chain has increased threats from untrusted entities involved in the process. Several mechanisms, such as logic locking, watermarking and split manufacturing, are widely used to ensure hardware secur
Externí odkaz:
https://doaj.org/article/2d9530a93a8a4173855b90cec3122aa5
Publikováno v:
International Journal of Extreme Manufacturing, Vol 7, Iss 1, p 012010 (2024)
Magnetoresistive random access memory (MRAM) is a promising non-volatile memory technology that can be utilized as an energy and space-efficient storage and computing solution, particularly in cache functions within circuits. Although MRAM has achiev
Externí odkaz:
https://doaj.org/article/b774e09aecc64f678ee061d65c22de18
Autor:
Samuel Liu, Jaesuk Kwon, Paul W. Bessler, Suma G. Cardwell, Catherine Schuman, J. Darby Smith, James B. Aimone, Shashank Misra, Jean Anne C. Incorvia
Publikováno v:
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, Vol 8, Iss 2, Pp 194-202 (2022)
Probabilistic computing using random number generators (RNGs) can leverage the inherent stochasticity of nanodevices for system-level benefits. Device candidates for this application need to produce highly random “coinflips” while also having tun
Externí odkaz:
https://doaj.org/article/492580caafc149168c5c2414ff18acbd
Autor:
Piyush Kumar, Azad Naeemi
Publikováno v:
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, Vol 8, Iss 2, Pp 185-193 (2022)
This article explores an area saving scheme for spin–orbit torque (SOT) magnetic random access memory (MRAM) by sharing the SOT channel and write transistor among multiple magnetic tunnel junctions (MTJs). We use two write mechanisms to selectively
Externí odkaz:
https://doaj.org/article/b8a6e6e341f54f8e961469d2a1673757
Publikováno v:
IEEE Access, Vol 10, Pp 102386-102395 (2022)
With the advancement of beyond CMOS devices, a new approach to utilize the inherent physics of such emerging structures for various applications is of great interest in recent research. Spintronics-based devices offer key advantages like ease of fabr
Externí odkaz:
https://doaj.org/article/4c211f57733846448a1516c8de305386
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