Zobrazeno 1 - 10
of 490
pro vyhledávání: '"spin qubit"'
Autor:
Jan Klos, Jan Tröger, Jens Keutgen, Merritt P. Losert, Nikolay V. Abrosimov, Joachim Knoch, Hartmut Bracht, Susan N. Coppersmith, Mark Friesen, Oana Cojocaru‐Mirédin, Lars R. Schreiber, Dominique Bougeard
Publikováno v:
Advanced Science, Vol 11, Iss 42, Pp n/a-n/a (2024)
Abstract Understanding crystal characteristics down to the atomistic level increasingly emerges as a crucial insight for creating solid state platforms for qubits with reproducible and homogeneous properties. Here, isotope concentration depth profile
Externí odkaz:
https://doaj.org/article/1c32a34c37c34bf3ad0c5210df46c1fe
Publikováno v:
Frontiers in Physics, Vol 12 (2024)
We report on the design and simulation of strip-loaded nanophotonic interfaces aimed at improving resonant coupling and photon routing efficiency. In our design, the guided mode is confined within a plane by a high-index thin film and is loosely conf
Externí odkaz:
https://doaj.org/article/dfff6956d0cc41dd95fff0f75a2146b6
Autor:
Mathieu de Kruijf, Grayson M. Noah, Alberto Gomez-Saiz, John J.L. Morton, M. Fernando Gonzalez-Zalba
Publikováno v:
Chip, Vol 3, Iss 3, Pp 100097- (2024)
Silicon technology offers the enticing opportunity for monolithic integration of quantum and classical electronic circuits. However, the power consumption levels of classical electronics may compromise the local chip temperature and hence affect the
Externí odkaz:
https://doaj.org/article/d78de5fe4dfa4a3b97b8fb297e72f6e3
Publikováno v:
IEEE Transactions on Quantum Engineering, Vol 5, Pp 1-11 (2024)
The development of future full-scale quantum computers (QCs) not only comprises the design of good quality qubits, but also entails the design of classical complementary metal–oxide semiconductor (CMOS) control circuitry and optimized operation pro
Externí odkaz:
https://doaj.org/article/59c16b77d74f4610baf38a0ae88560d5
Autor:
Takumi Inaba, Hiroshi Oka, Hidehiro Asai, Hiroshi Fuketa, Shota Iizuka, Kimihiko Kato, Shunsuke Shitakata, Koichi Fukuda, Takahiro Mori
Publikováno v:
IEEE Access, Vol 12, Pp 12458-12464 (2024)
This study investigated changes in low-frequency noise sources associated with short-channel bulk metal-oxide-semiconductor field-effect transistors (MOSFETs) by analyzing random telegraph noise (RTN) from 300 K down to 3 K. The power spectral densit
Externí odkaz:
https://doaj.org/article/86a0341b30734716b05676159ca3cc5b
Publikováno v:
Entropy, Vol 26, Iss 5, p 379 (2024)
Spin qubits in semiconductor quantum dots are an attractive candidate for scalable quantum information processing. Reliable quantum state transfer and entanglement between spatially separated spin qubits is a highly desirable but challenging goal. He
Externí odkaz:
https://doaj.org/article/98accad9f15d4efaa13610163c927bae
Autor:
Hiroshi Oka, Takumi Inaba, Shunsuke Shitakata, Kimihiko Kato, Shota Iizuka, Hidehiro Asai, Hiroshi Fuketa, Takahiro Mori
Publikováno v:
IEEE Access, Vol 11, Pp 121567-121573 (2023)
This study investigates the origin of low-frequency (LF) 1/ $f$ noise in Si n-channel metal-oxide-semiconductor field-effect transistors (n-MOSFETs) under cryogenic operation. The fluctuation of the drain current increased with decreasing temperature
Externí odkaz:
https://doaj.org/article/85ccaad116e34e26a41e0f4a9d4dbb21
Autor:
Soo‐hyon Phark, Hong Thi Bui, Alejandro Ferrón, Joaquin Fernández‐Rossier, Jose Reina‐Gálvez, Christoph Wolf, Yu Wang, Kai Yang, Andreas J. Heinrich, Christopher P. Lutz
Publikováno v:
Advanced Science, Vol 10, Iss 27, Pp n/a-n/a (2023)
Abstract Coherent control of individual atomic and molecular spins on surfaces has recently been demonstrated by using electron spin resonance (ESR) in a scanning tunneling microscope (STM). Here, a combined experimental and modeling study of the ESR
Externí odkaz:
https://doaj.org/article/7434ab315d9c4a9e984e48b043882fab
Publikováno v:
New Journal of Physics, Vol 26, Iss 5, p 053044 (2024)
To get a carbon-based qubit, we pay attention to the two-electron conduction band of a graphene quantum dot (GQD) in the presence of an external magnetic field and an extrinsic Rashba spin-orbit interaction (SOI). To help understand the formation of
Externí odkaz:
https://doaj.org/article/333777c9a78740d69cc6fc07cce35c93
Publikováno v:
New Journal of Physics, Vol 26, Iss 1, p 013012 (2024)
We study the implications of spin–orbit interaction (SOI) for two-qubit gates (TQGs) in semiconductor spin qubit platforms. SOI renders the exchange interaction governing qubit pairs anisotropic, posing a serious challenge for conventional TQGs der
Externí odkaz:
https://doaj.org/article/f1e63219b6494448b8bb974ddac88ca9