Zobrazeno 1 - 3
of 3
pro vyhledávání: '"spin injection in silicon"'
Autor:
H. Brückl, T. Uhrmann, M. Rührig, L. Bär, Amit Kohn, U Paschen, S Weyers, Theodoros Dimopoulos, Vlado K. Lazarov
In this work we present the structural and electrical characterization of sputter-deposited CoFe(B)/MgO/Si metal-insulator-semiconductor tunneling junctions for injection and detection of spin polarized current in silicon. The multilayers have been d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7c395273e3fed8909804b4b7949de885
https://doi.org/10.1063/1.2891503
https://doi.org/10.1063/1.2891503
Autor:
András Kovács, T Uhrmann, Amit Kohn, Theodoros Dimopoulos, U Paschen, Hubert Brückl, S Weyers, J Smoliner
Publikováno v:
JOURNAL OF PHYSICS D-APPLIED PHYSICS. 42(14)
In this work we present the electrical properties of sputter-deposited ferromagnetic (FM) Schottky diodes and MgO-based tunnelling diodes to n-doped (0 0 1) silicon. The effective Schottky barrier height (SBH) has been evaluated as a function of the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2764c89eadd8a865ab8ed87de8462951
http://ora.ox.ac.uk/objects/uuid:2223cf9a-2a4d-454c-9471-e7cdcb11dfc2
http://ora.ox.ac.uk/objects/uuid:2223cf9a-2a4d-454c-9471-e7cdcb11dfc2
We investigate the magnetic properties of arrays of sputter-deposited, Co70Fe30/Ni80Fe20 and Co40Fe40B20 contacts to silicon, embedded into 42 nm thick SiO2 dielectric. The contacts have rectangular shapes with blunt edges, sub-micrometre width and d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od_______610::4c11417b15944bef5ca3fe5ebab72579
https://publica.fraunhofer.de/handle/publica/218480
https://publica.fraunhofer.de/handle/publica/218480