Zobrazeno 1 - 10
of 2 189
pro vyhledávání: '"spin–orbit torque"'
Publikováno v:
Advanced Science, Vol 11, Iss 34, Pp n/a-n/a (2024)
Abstract Antiferromagnets are competitive candidates for the next generation of spintronic devices owing to their superiority in small‐scale and low‐power‐consumption devices. The electrical manipulation of the magnetization and exchange bias (
Externí odkaz:
https://doaj.org/article/e733f4eb8bfc49e280e36752e8bf2e21
Akademický článek
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Autor:
Ran Zhang, Xiaohan Li, Mingkun Zhao, Caihua Wan, Xuming Luo, Shiqiang Liu, Yu Zhang, Yizhan Wang, Guoqiang Yu, Xiufeng Han
Publikováno v:
Advanced Science, Vol 11, Iss 23, Pp n/a-n/a (2024)
Abstract The incorporation of randomness into stochastic computing can provide ample opportunities for applications such as simulated annealing, non‐polynomial hard problem solving, and Bayesian neuron networks. In these cases, a considerable numbe
Externí odkaz:
https://doaj.org/article/f7239f6e61e449f0bedef811a2fbe77e
Autor:
Ao Du, Daoqian Zhu, Zhiyang Peng, Zongxia Guo, Min Wang, Kewen Shi, Kaihua Cao, Chao Zhao, Weisheng Zhao
Publikováno v:
Advanced Electronic Materials, Vol 10, Iss 6, Pp n/a-n/a (2024)
Abstract Antiferromagnets (AFM) hold significant promise as ideal candidates for high‐density and ultrafast memory applications. Electrical manipulation of exchange bias (EB) has emerged as an effective solution to integrate AFMs into magnetic memo
Externí odkaz:
https://doaj.org/article/2670174666034b7392bfa554ed41c80a
Autor:
Cen Wang, Guang Zeng, Xinyu Wen, Yuhui He, Wei Luo, Shiwei Chen, Xiaofei Yang, Shiheng Liang, Yue Zhang
Publikováno v:
Advanced Electronic Materials, Vol 10, Iss 6, Pp n/a-n/a (2024)
Abstract Stochasticity plays a significant role in the low‐power operation of a biological neural network. In an artificial neural network, stochasticity also contributes to critical functions such as the uncertainty quantification (UQ) for estimat
Externí odkaz:
https://doaj.org/article/80f441fd173342aa943b712ee6de373f
Autor:
He Bai, Jialiang Li, Jintao Ke, Qixun Guo, Zhaozhao Zhu, Yaqin Guo, Xiao Deng, Dan Liu, Jianwang Cai, Tao Zhu
Publikováno v:
Advanced Electronic Materials, Vol 10, Iss 6, Pp n/a-n/a (2024)
Abstract The energy‐efficient spin‐orbit torque (SOT) based devices are essential for future memory and logic technologies. To realize a deterministic switching, an external in‐plane magnetic field is usually needed to break the symmetry, which
Externí odkaz:
https://doaj.org/article/cb1ebada7f2049fabf1b667b52796e3d
Autor:
Gyu Seung Choi, Sungyu Park, Eun‐Su An, Juhong Bae, Inseob Shin, Beom Tak Kang, Choong Jae Won, Sang‐Wook Cheong, Hyun‐Woo Lee, Gil‐Ho Lee, Won Joon Cho, Jun Sung Kim
Publikováno v:
Advanced Science, Vol 11, Iss 21, Pp n/a-n/a (2024)
Abstract All‐Van der Waals (vdW)‐material‐based heterostructures with atomically sharp interfaces offer a versatile platform for high‐performing spintronic functionalities at room temperature. One of the key components is vdW topological insu
Externí odkaz:
https://doaj.org/article/79aeb4d5dcc84ac89e9a428caa7867d7
Autor:
Yuya Fujiwara, Takayuki Kawahara
Publikováno v:
IEEE Access, Vol 12, Pp 150962-150974 (2024)
To build Neural Networks (NNs) on edge devices, Binarized Neural Network (BNN) has been proposed on the software side, while Computing-in-Memory (CiM) architecture has been proposed on the hardware side. For use on CiM architecture-based BNN, Magneti
Externí odkaz:
https://doaj.org/article/9f62b4a18cf14024a7359545cb7cc2f8
Publikováno v:
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, Vol 10, Pp 13-21 (2024)
While magnetic random-access memories (MRAMs) are promising because of their nonvolatility, relatively fast speeds, and high endurance, there are major challenges in adopting them for the advanced technology nodes. One of the major challenges in scal
Externí odkaz:
https://doaj.org/article/c57ce292b48d402b8edde7ca486724fd
Autor:
Weiran Xie, Hangtian Wang, Ruiling Chen, Ying Zhang, Peiyuan Yu, Guodong Wei, Jie Zhang, Tianxiao Nie
Publikováno v:
Results in Physics, Vol 60, Iss , Pp 107630- (2024)
Spintronic devices have become a crucial technology for overcoming the power consumption bottleneck in integrated circuits, due to their low power consumption, high-speed processing capability. Two-dimensional materials offer potential for performanc
Externí odkaz:
https://doaj.org/article/b00be32d3cdf4b13ae4bfbbe3ba467c2