Zobrazeno 1 - 10
of 1 143
pro vyhledávání: '"single-event upset (SEU)"'
Autor:
Minji Bang, Jonghyeon Ha, Minki Suh, Dabok Lee, Minsang Ryu, Jin-Woo Han, Hyunchul Sagong, Hojoon Lee, Jungsik Kim
Publikováno v:
IEEE Access, Vol 12, Pp 130347-130355 (2024)
The effects of single event upset (SEU) by alpha particles and heavy ions on the data flip of a 3 nm technology node gate-all-around (GAA) nanosheet field-effect transistor (NSFET) 6T static random-access memory (SRAM) cell was studied through techno
Externí odkaz:
https://doaj.org/article/c729c86dcf4b40dd8aafed6967dcc577
Autor:
Hong-Geun Park, Sung-Hun Jo
Publikováno v:
Applied Sciences, Vol 14, Iss 23, p 10961 (2024)
In space environments, radiation particles affect the stored values of SRAM cells, and these effects, such as single-event upsets (SEUs) and single-event multiple-node upsets (SEMNUs), pose a threat to the reliability of systems used in the space ind
Externí odkaz:
https://doaj.org/article/fe81638f55e743d69169ba14c39a8272
Publikováno v:
فصلنامه علوم و فناوری فضایی, Vol 16, Iss 2, Pp 43-54 (2023)
In this paper, the sensitive volume and critical charge of a 65-nm CMOS SRAM as two important quantities in Single Event Upset (SEU) calculations have been determined. SEU is the most common event in space investigations. To this purpose, a memory ce
Externí odkaz:
https://doaj.org/article/3bd39fe625014f28a61a4178f8924718
Publikováno v:
Frontiers in Computational Neuroscience, Vol 17 (2023)
Soft error has increasingly become a critical concern for SRAM-based field programmable gate arrays (FPGAs), which could corrupt the configuration memory that stores configuration data describing the custom-designed circuit architecture. To mitigate
Externí odkaz:
https://doaj.org/article/e2fa290a47bc4acaa3958ccf854be7af
Publikováno v:
Sensors, Vol 24, Iss 4, p 1065 (2024)
In the pursuit of enhancing the technological maturity of innovative magnetic sensing techniques, opportunities presented by in-orbit platforms (IOD/IOV experiments) provide a means to evaluate their in-flight capabilities. The Magnetic Experiments f
Externí odkaz:
https://doaj.org/article/d8f7ff2a3e4e4a2787340445d9b23991
Publikováno v:
Applied Sciences, Vol 14, Iss 3, p 1229 (2024)
Integrated circuits suffer severe deterioration due to single-event upsets (SEUs) in irradiated environments. Spin-transfer torque magnetic random-access memory (STT-MRAM) appears to be a promising candidate for next-generation memory as it shows pro
Externí odkaz:
https://doaj.org/article/414c431ea0f1485bb28fcf8b126329ff
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.
Publikováno v:
IEEE Access, Vol 10, Pp 47169-47178 (2022)
This study analyzes the effects of the punch-through stop (PTS) layer and well depth in a bulk FinFET SRAM cell on the fraction of charge generated by an ion impact that is collected by the FinFET channel. More than 1700 3D TCAD simulations have been
Externí odkaz:
https://doaj.org/article/3c6b73bd73c549c6baa37cba6cdcc379
Autor:
Alok Kumar Shukla, Seema Dhull, Arshid Nisar, Sandeep Soni, Namita Bindal, Brajesh Kumar Kaushik
Publikováno v:
IEEE Open Journal of Nanotechnology, Vol 3, Pp 78-84 (2022)
The rapid transistor scaling and threshold voltage reduction pose several challenges such as high leakage current and reliability issues. These challenges also make VLSI circuits more susceptible to soft-errors, particularly when subjected to harsh e
Externí odkaz:
https://doaj.org/article/bb7169814ed14395b7ddaa52bc01f531
Autor:
Seyedehsomayeh Hatefinasab, Akiko Ohata, Alfonso Salinas, Encarnacion Castillo, Noel Rodriguez
Publikováno v:
IEEE Access, Vol 10, Pp 31836-31850 (2022)
As CMOS technology scaling pushes towards the reduction of the length of transistors, electronic circuits face numerous reliability issues, and in particular nodes of D-latches at nano-scale confront multiple-node upset errors due to their operation
Externí odkaz:
https://doaj.org/article/6d72230f030a4576823d62d8dcbccaf6