Zobrazeno 1 - 10
of 4 945
pro vyhledávání: '"single-event upset"'
Publikováno v:
Nuclear Engineering and Technology, Vol 56, Iss 8, Pp 2916-2922 (2024)
In memory semiconductors such as a static random access memory (SRAM), a common problem is soft errors under radiation environment. These soft errors cause bit flips, which are referred to as single event upsets (SEUs). Some radiation-hardened SRAM c
Externí odkaz:
https://doaj.org/article/df52b849542f47ba986ec1191bca6be6
Publikováno v:
Yuanzineng kexue jishu, Vol 58, Iss 2, Pp 506-512 (2024)
The space environment is a very harsh operating environment, and space radiation can directly affect the operation of electronic devices causing total ionizing dose (TID), single event effect (SEE) and displacement damage (DD). For most devices TID a
Externí odkaz:
https://doaj.org/article/d2a1f1a60d674da9a8a4b30116889eb9
Autor:
Minji Bang, Jonghyeon Ha, Minki Suh, Dabok Lee, Minsang Ryu, Jin-Woo Han, Hyunchul Sagong, Hojoon Lee, Jungsik Kim
Publikováno v:
IEEE Access, Vol 12, Pp 130347-130355 (2024)
The effects of single event upset (SEU) by alpha particles and heavy ions on the data flip of a 3 nm technology node gate-all-around (GAA) nanosheet field-effect transistor (NSFET) 6T static random-access memory (SRAM) cell was studied through techno
Externí odkaz:
https://doaj.org/article/c729c86dcf4b40dd8aafed6967dcc577
Publikováno v:
Yuanzineng kexue jishu, Vol 58, Iss 4, Pp 945-951 (2024)
Radiation effect of the device becomes more important with the development of aerospace due to them may change the state or even destroy the device. The major types of the radiation effect include single event effect (SEE), total ionizing dose (TID)
Externí odkaz:
https://doaj.org/article/516846e9d43c4f55b0e228b44fde924f
Publikováno v:
EAI Endorsed Transactions on Energy Web, Vol 11 (2024)
Single event upsets (SEUs), which are caused by radiation particles, have emerged as a significant concern in aircraft applications. Soft mistakes, which manifest as corruption of data in memory chips and circuit faults, are mostly produced by SEUs.
Externí odkaz:
https://doaj.org/article/7e9d14d65a624888894792843c180d78
Publikováno v:
فصلنامه علوم و فناوری فضایی, Vol 16, Iss 2, Pp 43-54 (2023)
In this paper, the sensitive volume and critical charge of a 65-nm CMOS SRAM as two important quantities in Single Event Upset (SEU) calculations have been determined. SEU is the most common event in space investigations. To this purpose, a memory ce
Externí odkaz:
https://doaj.org/article/3bd39fe625014f28a61a4178f8924718
Autor:
Zhang Binquan, Zhang Shenyi, Shen Guohong, Tuo Changsheng, Zhang Xin, Zhang Huanxin, Quan Lin, Tian Chao, Hou Donghui, Zhou Ping, Ji Wentao
Publikováno v:
Open Astronomy, Vol 32, Iss 1, Pp 93-97 (2023)
The single event effect caused by space heavy ion radiation is one of the important factors affecting the safety and operation of spacecraft on orbit. In the research and evaluation of the frequency, spatial distribution and time characteristics of s
Externí odkaz:
https://doaj.org/article/5d2cad963a4549a39796c776127f1ced
Autor:
Qi, Chunhua, Ma, Guoliang, Zhang, Yanqing, Wang, Tianqi, Rui, Erming, Jiao, Qiang, Liu, Chaoming, Huo, Mingxue, Zhai, Guofu
Publikováno v:
Microelectronics International, 2023, Vol. 40, Issue 2, pp. 89-95.
Externí odkaz:
http://www.emeraldinsight.com/doi/10.1108/MI-06-2022-0110
Publikováno v:
Frontiers in Computational Neuroscience, Vol 17 (2023)
Soft error has increasingly become a critical concern for SRAM-based field programmable gate arrays (FPGAs), which could corrupt the configuration memory that stores configuration data describing the custom-designed circuit architecture. To mitigate
Externí odkaz:
https://doaj.org/article/e2fa290a47bc4acaa3958ccf854be7af
Publikováno v:
Sensors, Vol 24, Iss 4, p 1065 (2024)
In the pursuit of enhancing the technological maturity of innovative magnetic sensing techniques, opportunities presented by in-orbit platforms (IOD/IOV experiments) provide a means to evaluate their in-flight capabilities. The Magnetic Experiments f
Externí odkaz:
https://doaj.org/article/d8f7ff2a3e4e4a2787340445d9b23991