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pro vyhledávání: '"single charge"'
Autor:
Yamahata, Gento, Fujiwara, Akira
Publikováno v:
Applied Physics Letters 125, 163502 (2024)
The mechanism of single-charge pumping using a dynamic quantum dot needs to be precisely understood for high-accuracy and universal operation toward applications to quantum current standards and quantum information devices. The type of charge carrier
Externí odkaz:
http://arxiv.org/abs/2408.01223
Publikováno v:
2023 International Conference on Noise and Fluctuations (ICNF), Grenoble, France, 2023
Previously we have shown that pure 1/f noise arises from the trapping-detrapping process when traps are heterogeneous. Namely, the trapping-detrapping process relies on the assumption that detrapping rates of individual trapping centers in the conden
Externí odkaz:
http://arxiv.org/abs/2403.20257
Akademický článek
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Autor:
Marcks, Jonathan C., Onizhuk, Mykyta, Wang, Yu-Xin, Zhu, Yizhi, Jin, Yu, Soloway, Benjamin S., Fukami, Masaya, Delegan, Nazar, Heremans, F. Joseph, Clerk, Aashish A., Galli, Giulia, Awschalom, David D.
Electronic defects in semiconductors form the basis for many emerging quantum technologies. Understanding defect spin and charge dynamics in solid state platforms is crucial to developing these building blocks, but many defect centers are difficult t
Externí odkaz:
http://arxiv.org/abs/2312.02894
Publikováno v:
Phys. Rev. B 107, 195407 (2023)
We study full counting statistics of electron transport through a Majorana single-charge transistor. At low bias voltage, transport is dominated by the so-called Josephson-Majorana cycle, a sequence of normal and anomalous single-charge and Josephson
Externí odkaz:
http://arxiv.org/abs/2303.04046
Akademický článek
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Autor:
Dai, Danjie, Wang, Xinyan, Yang, Jingnan, Dang, Jianchen, Yuan, Yu, Fu, Bowen, Xie, Xin, Yang, Longlong, Xiao, Shan, Shi, Shushu, Yan, Sai, Zhu, Rui, Zuo, Zhanchun, Wang, Can, Jin, Kuijuan, Gong, Qihuang, Xu, Xiulai
Publikováno v:
Nanoscale, 2022,14, 14537-14543
Single charge control of localized excitons (LXs) in two-dimensional transition metal dichalcogenides (TMDCs) is crucial for potential applications in quantum information processing and storage. However, traditional electrostatic doping method with a
Externí odkaz:
http://arxiv.org/abs/2209.15401
Spin qubits in semiconductor quantum dots are one of the promizing devices to realize a quantum processor. A better knowledge of the noise sources affecting the coherence of such a qubit is therefore of prime importance. In this work, we study the ef
Externí odkaz:
http://arxiv.org/abs/2210.10476