Zobrazeno 1 - 10
of 33
pro vyhledávání: '"silicon semiconductors"'
Autor:
Chen, E. Elinor
Thesis (Ph. D.)--Lehigh University, 2003.
Includes bibliographical references and vita.
Includes bibliographical references and vita.
Akademický článek
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Autor:
Marco Costa, S Anglesio, D. Bortot, O. Sans Planell, D L Visca, J.M. Gómez-Ros, M Romano, E. Durisi, K. Alikaniotis, Roberto Bedogni, Monti, G. Giannini, M. Treccani, Andrea Pola, M Ferrero
Radiation-resistant, gamma-insensitive, active thermal neutron detectors were developed to monitor the thermal neutron cavity of the E_LIBANS project. Silicon and silicon carbide semiconductors, plus vented air ion chambers, were chosen for this purp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::81fc355430752918ade5909902755748
http://hdl.handle.net/11311/1062786
http://hdl.handle.net/11311/1062786
Autor:
Benjamin Lenz, Uwe Höckele, Gunter Pfeifer, Kurt Weinzierl, Hendrik Purwins, Srikanth Cherla, Andreas Kyek, Ahmed Nagi, Bernd Barak, Reiner Engel
Publikováno v:
Purwins, H, Barak, B, Nagi, A, Engel, R, Höckele, U, Kyek, A, Cherla, S, Lenz, B, Pfeifer, G & Weinzierl, K 2014, ' Regression Methods for Virtual Metrology of Layer Thickness in Chemical Vapor Deposition ', I E E E-A S M E Transactions on Mechatronics, vol. 19, no. 1, pp. 1-8 . https://doi.org/10.1109/TMECH.2013.2273435
The quality of wafer production in semiconductor manufacturing cannot always be monitored by a costly physical measurement. Instead of measuring a quantity directly, it can be predicted by a regression method (Virtual Metrology). In this paper, a sur
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1ca5182176352ff34eb66df1a0f22985
https://vbn.aau.dk/da/publications/2653d3c2-17bd-4403-bfa0-a9fa944cebf8
https://vbn.aau.dk/da/publications/2653d3c2-17bd-4403-bfa0-a9fa944cebf8
Autor:
Li, Jing.
Publikováno v:
Access to citation, abstract and download form provided by ProQuest Information and Learning Company; downloadable PDF file, 53 p.
Thesis (M.S.E.C.E.)--University of Delaware, 2009.
Principal faculty advisors: Ian Appelbaum and James Kolodzey, Dept. of Electrical & Computer Engineering. Includes bibliographical references.
Principal faculty advisors: Ian Appelbaum and James Kolodzey, Dept. of Electrical & Computer Engineering. Includes bibliographical references.
Externí odkaz:
http://proquest.umi.com/pqdweb?did=1885755961&sid=6&Fmt=2&clientId=8331&RQT=309&VName=PQD
Autor:
Antonio Cassinese, Pablo Stoliar, Tobias Cramer, Fabio Biscarini, Pasquale D'Angelo, Francesco Zerbetto
A dynamic method for quantifying the amount and mechanism of trapping in organic field effect transistors (OFETs) is proposed. It exploits transfer characteristics acquired upon application of a triangular waveform gate sweep V G. The analysis of the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6ad4c1c73f3e075e4aaea07d5a47c2ea
http://hdl.handle.net/11585/82724
http://hdl.handle.net/11585/82724
Autor:
Sustersic, Nathan Anthony.
Publikováno v:
Access to citation, abstract and download form provided by ProQuest Information and Learning Company; downloadable PDF file 3.10 Mb., 83 p.
Thesis (M.E.E.)--University of Delaware, 2006.
Principal faculty advisor: James Kolodzey, Electrical and Computer Engineering. Includes bibliographical references.
Principal faculty advisor: James Kolodzey, Electrical and Computer Engineering. Includes bibliographical references.
Autor:
Lo, Chi Chuen.
Publikováno v:
View abstract or full-text..
Thesis (M. Phil.)--Hong Kong University of Science and Technology, 2004.
Includes bibliographical references (leaves 118-122). Also available in electronic version. Access restricted to campus users.
Includes bibliographical references (leaves 118-122). Also available in electronic version. Access restricted to campus users.
Externí odkaz:
http://library.ust.hk/cgi/db/thesis.pl?MECH%202004%20LO
Akademický článek
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Akademický článek
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