Zobrazeno 1 - 10
of 51
pro vyhledávání: '"silicon semiconductor"'
Autor:
Subash C.B. Gopinath, Santheraleka Ramanathan, Mohd Najib Mohd Yasin, Mohd Ibrahim Shapiai Razak, Zool Hilmi Ismail, Syahrizal Salleh, Zaliman Sauli, M.B. Malarvili, Sreeramanan Subramaniam
Publikováno v:
Journal of Materials Research and Technology, Vol 21, Iss , Pp 3451-3461 (2022)
Defects of silicon (Si) semiconductor epilayers are crucial to be identified at laboratory environs. The identification of failure and its rectification at laboratory settings is essential for large-scaling manufacturing of narrowed down semiconducto
Externí odkaz:
https://doaj.org/article/9dfa890cb904450695577f296197038e
Autor:
P. Maleki, Gh.R. Etaati
Publikováno v:
مجله علوم و فنون هستهای, Vol 41, Iss 3, Pp 37-44 (2020)
The accuracy of each simulating beta-voltaic battery parameter is very important, especially in micro-batteries. The aim of this study is to improve the calculation of beta-battery parameters’ accuracy. For this purpose, at first, using the Monte C
Externí odkaz:
https://doaj.org/article/0aabd8cb3b2f46a2a529cc6542396a15
Autor:
Emma Verelst, Nico Buls, Johan De Mey, Koenraad Hans Nieboer, Frans Vandenbergh, Dominic Crotty, Paul Deak, Albert Sundvall, Staffan Holmin, Aron De Smet, Steven Provyn, Gert Van Gompel
Publikováno v:
European Radiology Experimental. 7
Background In this study, stent appearance in a novel silicon-based photon-counting computed tomography (Si-PCCT) prototype was compared with a conventional energy-integrating detector CT (EIDCT) system. Methods An ex vivo phantom was created, consis
In this cumulative dissertation organic-inorganic hybrid interfaces with relevance for nanoelectronic applications are investigated with theoretical methods. An emphasis is put on the elucidation of interface reaction mechanisms and the employment of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c4482709098fbf493be6d6fda9370bde
Akademický článek
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Akademický článek
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Autor:
Ernst J. R. Sudhölter, Pascal Jonkheijm, Duco Bosma, Louis C. P. M. de Smet, Mark L. Verheijden, Lukasz Poltorak
Publikováno v:
Biochimica et Biophysica Acta-Biomembranes 1860 (2018) 12
Biochimica et Biophysica Acta-Biomembranes, 1860(12)
Biochimica et Biophysica Acta-Biomembranes, 1860(12), 2669-2680
Biochimica et Biophysica Acta-Biomembranes, 1860(12), 2669-2680. Elsevier
Biochimica et Biophysica Acta-Biomembranes, 1860(12)
Biochimica et Biophysica Acta-Biomembranes, 1860(12), 2669-2680
Biochimica et Biophysica Acta-Biomembranes, 1860(12), 2669-2680. Elsevier
Silicon semiconductors with a thin surface layer of silica were first modified with polyelectrolytes (polyethyleneimine, polystyrene sulfonate and poly(allylamine)) via a facile layer-by-layer deposition approach. Subsequently, lipid vesicles were ad
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::df9a6fd26e571570a87b7bf9a358f591
https://research.wur.nl/en/publications/lipid-bilayers-cushioned-with-polyelectrolyte-based-films-on-dope
https://research.wur.nl/en/publications/lipid-bilayers-cushioned-with-polyelectrolyte-based-films-on-dope
Autor:
Treephak, Kasem, Jutturit Thongporn, Dhirasak Somsak, Yuttana Kanthapayao, Nopporn Patcharaprakiti
RMUTL Engineering Journal, 3, 1
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ce2a46937849291afb84c258b5316f0e
Autor:
Marco Costa, S Anglesio, D. Bortot, O. Sans Planell, D L Visca, J.M. Gómez-Ros, M Romano, E. Durisi, K. Alikaniotis, Roberto Bedogni, Monti, G. Giannini, M. Treccani, Andrea Pola, M Ferrero
Radiation-resistant, gamma-insensitive, active thermal neutron detectors were developed to monitor the thermal neutron cavity of the E_LIBANS project. Silicon and silicon carbide semiconductors, plus vented air ion chambers, were chosen for this purp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::81fc355430752918ade5909902755748
http://hdl.handle.net/11311/1062786
http://hdl.handle.net/11311/1062786
Publikováno v:
Physica Status Solidi C
Physica status solidi. C, Current topics in solid state physics (Internet) 14 (2017). doi:10.1002/pssc.201700193
info:cnr-pdr/source/autori:Bertocchi M.; Amato M.; Marri I.; Ossicini S./titolo:Tuning the Work Function of Si(100) Surface by Halogen Absorption: A DFT Study/doi:10.1002%2Fpssc.201700193/rivista:Physica status solidi. C, Current topics in solid state physics (Internet)/anno:2017/pagina_da:/pagina_a:/intervallo_pagine:/volume:14
Physica status solidi. C, Current topics in solid state physics (Internet) 14 (2017). doi:10.1002/pssc.201700193
info:cnr-pdr/source/autori:Bertocchi M.; Amato M.; Marri I.; Ossicini S./titolo:Tuning the Work Function of Si(100) Surface by Halogen Absorption: A DFT Study/doi:10.1002%2Fpssc.201700193/rivista:Physica status solidi. C, Current topics in solid state physics (Internet)/anno:2017/pagina_da:/pagina_a:/intervallo_pagine:/volume:14
First-principles calculations of work function tuning induced by different chemical terminations on Si(100) surface are presented and discussed. We find that the presence of halogen atoms (I, Br, Cl, and F) leads to an increase of the work function i