Efficiency Optimization for All-Silicon Carbide (SiC) PWM Rectifier Considering the Impact of Gate-Source Voltage Interference

Autor: Zhijun Li, Zuoxing Wang, Trillion Zheng, Hong Li, Bo Huang, Tiancong Shao

Publikováno v: Energies, Vol 13, Iss 6, p 1421 (2020)

Compared with conventional silicon (Si)-based Pulse Width Modulation (PWM) rectifiers, PWM rectifiers based on silicon carbide (SiC) Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) have significant technical advantages and broad applicat

Externí odkaz: https://doaj.org/article/46f9cf63a29b4d1797b090651c5ee4c5

Efficiency Optimization for All-Silicon Carbide (SiC) PWM Rectifier Considering the Impact of Gate-Source Voltage Interference

Autor: Trillion Q. Zheng, Tiancong Shao, Zhijun Li, Hong Li, Bo Huang, Zuoxing Wang

Publikováno v: Energies, Vol 13, Iss 6, p 1421 (2020)
Energies
Volume 13
Issue 6

Compared with conventional silicon (Si)-based Pulse Width Modulation (PWM) rectifiers, PWM rectifiers based on silicon carbide (SiC) Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) have significant technical advantages and broad applicat

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ebf365cd3c998141f5474a8fd36b27ae
https://doi.org/10.3390/en13061421

Review and Trends in Traction Motor Design: Primary and Secondary Insulation Systems

Autor: Shafigh Nategh, Daniel E. Barber, Aldo Boglietti, David Lindberg, Ola Aglen

This paper presents a review of the available insulation systems for traction motors. Two primary insulation systems used in traction applications with thermal classes of H and N are discussed. The insulation systems used in random windings are typic

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::220b34134ee149a4a9095fd364025af8
http://hdl.handle.net/11583/2725348

Silicon-carbide semiconductors as base for active rectifier

Autor: Kharitonov, S. A., Korobkov, D. V., Makarov, D. V., Volkov, A. G., Sidorov, A. V.

В докладе представлена концепция построения преобразователя частоты по типу активного выпрямителя на сверхмалые массо-габаритные пок�

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=od_______917::e8636691c11cb4b440a9a3ec70547075
https://hdl.handle.net/10995/35275

The fabrication and characterization of ion-implanted germanium-incorporated silicon-carbide diodes and transistors

Autor: Lang, Matthias.

Publikováno v: Access to citation, abstract and download form provided by ProQuest Information and Learning Company; downloadable PDF file 1.35 Mb., 102 p.

Thesis (M.C.E.)--University of Delaware, 2006.
Principal faculty advisor: James Kolodzey, Dept. of Electrical and Computer Engineering. Includes bibliographical references.

Externí odkaz: http://wwwlib.umi.com/dissertations/fullcit/1436218