Zobrazeno 1 - 10
of 3 460
pro vyhledávání: '"sic mosfet"'
Publikováno v:
Energies, Vol 17, Iss 23, p 6061 (2024)
Accurate modeling of the switching transients of SiC MOSFETs is essential for overvoltage evaluation, EMI prediction, and other critical applications. Due to the fast switching speed, the switching transients of SiC MOSFETs are highly sensitive to pa
Externí odkaz:
https://doaj.org/article/412bb2a77f0f458db766bad93e7d4e36
Publikováno v:
Energies, Vol 17, Iss 23, p 6175 (2024)
In a converter of actual working condition, the change in the current and voltage of the power device will cause the junction temperature to fluctuate greatly. This device is subjected to high thermal stress due to the change in the junction temperat
Externí odkaz:
https://doaj.org/article/cc1aebbfc5794225b2b378cacc975f42
Autor:
Joao Oliveira, Jean-Michel Reynes, Hervé Morel, Pascal Frey, Olivier Perrotin, Laurence Allirand, Stéphane Azzopardi, Michel Piton, Fabio Coccetti
Publikováno v:
Energies, Vol 17, Iss 21, p 5476 (2024)
The short-circuit (SC) immunity of power silicon carbide (SiC) MOSFETs is critical for high-reliability applications, where robust monitoring and protection strategies are essential to ensure system safety. Despite their superior voltage blocking cap
Externí odkaz:
https://doaj.org/article/2147a465af7b4cda8d50b1cec018d707
Autor:
Li, Qian
This dissertation introduces a hierarchical optimization framework for power converter-based energy management systems, with a primary focus on weight minimization. Emphasizing modularity and scalability, the research systematically tackles the chall
Externí odkaz:
https://hdl.handle.net/10919/119388
Autor:
Mu He, Peng Dong, Yao Ma, Qingkui Yu, Shuang Cao, Wende Huang, Qian Xu, Sijie Zhang, Mingmin Huang, Yun Li, Zhimei Yang, Min Gong
Publikováno v:
Results in Physics, Vol 60, Iss , Pp 107672- (2024)
In this work, the electron irradiation effects and post-irradiation annealing (PIA) response on SiC MOSFETs were investigated and analyzed in terms of the evolution of oxide- and interface-trap charges after irradiation and PIA. It is found that the
Externí odkaz:
https://doaj.org/article/8b5e8485341344039951d55ffcf5921f
Publikováno v:
IEEE Access, Vol 12, Pp 177795-177810 (2024)
Modern energy systems (e.g., electric ships, aircraft, and vehicles) are increasingly designed with interconnected power converters that are tightly packaged to form an extensive network. It enables high-efficiency multi-functional operations by inte
Externí odkaz:
https://doaj.org/article/a13a329451594f6bbb536b2a98658f7d
Autor:
Anliang Hu, Jurgen Biela
Publikováno v:
IEEE Open Journal of Power Electronics, Vol 5, Pp 1684-1696 (2024)
Fast and accurate switching loss models that can be used for different devices are crucial for optimization-based converter design. This paper proposes a novel data sheet based, fully analytical loss model for a SiC MOSFET and Schottky diode half-bri
Externí odkaz:
https://doaj.org/article/59314563771b46deb76e7acc12ad4698
Autor:
Ran Yao, Zheyan Zhu, Hui Li, Wei Lai, Xianping Chen, Francesco Iannuzzo, Renkuan Liu, Xiaorong Luo
Publikováno v:
IEEE Open Journal of Power Electronics, Vol 5, Pp 1629-1640 (2024)
The conventional TO-247-3 packages with single-sided cooling limit the thermal and electrical performances of discrete SiC MOSFET devices. In this paper, a double-sided cooling press-pack (PP) packaging approach for the discrete SiC MOSFET device is
Externí odkaz:
https://doaj.org/article/c45fc28179dc47628cfc210a5cb34c92
Publikováno v:
CSEE Journal of Power and Energy Systems, Vol 10, Iss 4, Pp 1799-1807 (2024)
Compared to Si devices, the junction temperature of SiC devices is more critical due to the reliability concern introduced by immature packaging technology applied to new material. This paper proposes a practical SiC MOSFET junction temperature monit
Externí odkaz:
https://doaj.org/article/92a5e615a6e742c9ab2a29528746a92c
Autor:
Shin-Ichiro Hayashi, Keiji Wada
Publikováno v:
IEEE Open Journal of Power Electronics, Vol 5, Pp 709-717 (2024)
This paper proposes a gate drive circuit with a condition monitoring function for detecting the gate oxide degradation in silicon carbide (SiC) metal–oxide–semiconductor field-effect transistors (MOSFETs). Trapped charges in the gate oxide can ca
Externí odkaz:
https://doaj.org/article/92b2b972cf7c4562a26e606ad6b3be03