Zobrazeno 1 - 10
of 5 579
pro vyhledávání: '"short channel"'
Autor:
Hima Bindu Valiveti, Indr Jeet Rajput, N. Udaya Kumar, Harsh Lohiya, R. Sri Uma Suseela, Atul Singla, Saurabh Rajvanshi
Publikováno v:
Cogent Engineering, Vol 11, Iss 1 (2024)
When developing a nano-chip, nano-electronics and its principles play a vital role in resultant circuit construction using numerous components. The channel spacing, length and height of the components is measured in nanometre (nm). These nm-sized cha
Externí odkaz:
https://doaj.org/article/e98e4e1ce6294f4790a7303cc1deee49
Autor:
Laixiang Qin, He Tian, Chunlai Li, Ziang Xie, Yiqun Wei, Yi Li, Jin He, Yutao Yue, Tian‐Ling Ren
Publikováno v:
Advanced Electronic Materials, Vol 10, Iss 8, Pp n/a-n/a (2024)
Abstract With field effect transistor (FET) sustained to downscale to sub‐10 nm nodes, performance degradation originates from short channel effects (SCEs) degradation and power consumption increment attributed to inhibition of supply voltage (VDD)
Externí odkaz:
https://doaj.org/article/e16c77267e8842d2987b290dc2fd0130
Publikováno v:
Heliyon, Vol 10, Iss 11, Pp e31834- (2024)
The purpose of this study is to investigate the possibilities of the junction-less double-gate (JLDG) MOSFET structure with gallium nitride (GaN) channel material to overcome the limitations of conventional MOSFET structures in improving device perfo
Externí odkaz:
https://doaj.org/article/f025cba2c3c7426f96f838cc9e1672ee
Autor:
Seunghwan Lee, Seungjoon Eom, Jinsu Jeong, Junjong Lee, Sanguk Lee, Hyeok Yun, Yonghwan Ahn, Rock-Hyun Baek
Publikováno v:
IEEE Access, Vol 12, Pp 184619-184628 (2024)
We present a novel multi-task learning (MTL) approach with shared representation for the real-time extraction of Berkeley Short-channel IGFET Model-Common Gate (BSIM-CMG) parameters in nanosheet field-effect transistors (NSFETs) with multiple structu
Externí odkaz:
https://doaj.org/article/e45b9ce020794694a8efa134ebbd1964
Autor:
Chae-Eun Oh, Ye-Lim Han, Dong-Ho Lee, Jin-Ha Hwang, Hwan-Seok Jeong, Myeong-Ho Kim, Kyoung-Seok Son, Sunhee Lee, Sang-Hun Song, Hyuck-In Kwon
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 12, Pp 564-568 (2024)
We demonstrate that the shorter channel self-aligned top-gate (SA TG) coplanar indiumgallium- zinc oxide (IGZO) thin-film transistors (TFTs), with negative voltage applied to the back-gate, exhibit superior characteristics as driving transistors in o
Externí odkaz:
https://doaj.org/article/0ebef8af161c4d67b5095f0a9d0c8274
Autor:
Takumi Inaba, Hiroshi Oka, Hidehiro Asai, Hiroshi Fuketa, Shota Iizuka, Kimihiko Kato, Shunsuke Shitakata, Koichi Fukuda, Takahiro Mori
Publikováno v:
IEEE Access, Vol 12, Pp 12458-12464 (2024)
This study investigated changes in low-frequency noise sources associated with short-channel bulk metal-oxide-semiconductor field-effect transistors (MOSFETs) by analyzing random telegraph noise (RTN) from 300 K down to 3 K. The power spectral densit
Externí odkaz:
https://doaj.org/article/86a0341b30734716b05676159ca3cc5b
Autor:
Rinku Rani Das, Alex James
Publikováno v:
IEEE Access, Vol 12, Pp 462-470 (2024)
Multi-channel FinFET ( $\text{M}_{\textbf {ch}}$ -FinFET) is an emerging device having promising use due to its excellent driving capability. In this paper, we have investigated the significance of multiple channels of FinFET configuration. We have e
Externí odkaz:
https://doaj.org/article/f7fd11d1dcfc41b8a302f2e7e9a33090
Publikováno v:
Micromachines, Vol 15, Iss 10, p 1187 (2024)
The surge in demand for 3D MOSFETs, such as FinFETs, driven by recent technological advances, is explored in this review. FinFETs, positioned as promising alternatives to bulk CMOS, exhibit favorable electrostatic characteristics and offer power/perf
Externí odkaz:
https://doaj.org/article/43ba645be2454ab1b6a2b24278f32255
Publikováno v:
Power Electronic Devices and Components, Vol 7, Iss , Pp 100057- (2024)
In this work, the impact of Short Channel Effects (SCEs), particularly Drain Induced Barrier Lowering (DIBL) on the performance of a high voltage Silicon Carbide (SiC) JFET has been thoroughly investigated. Drift-Diffusion simulations of on-state cur
Externí odkaz:
https://doaj.org/article/ce5679b214fc44a4aff223db5e5dc96f
Publikováno v:
Advanced Electronic Materials, Vol 10, Iss 3, Pp n/a-n/a (2024)
Abstract Organic field‐effect transistors (OFETs) have been extensively studied over the past decades because of their suitability for low‐cost, large‐area, and flexible electronics. However, improvements are needed to satisfy the demands of hi
Externí odkaz:
https://doaj.org/article/8959e8b80a6e452e9fd74f29ceab5e81