Magnetospectroscopy of shallow donors in two dimensions in the presence of fluctuations of the electrostatic potential

Autor: Karpierz Krzysztof, Szot Michał, Wojtowicz Tomasz, Łusakowski Jerzy

Publikováno v: Nanophotonics, Vol 13, Iss 10, Pp 1873-1882 (2024)

Spectroscopy of shallow donors is a tool to test theoretical models and to reveal properties of semiconductors. In this work we consider intra-shallow impurity transitions by studying a CdTe/(Cd, Mg)Te structure grown by a molecular beam epitaxy in w

Externí odkaz: https://doaj.org/article/fee67faf842e478995f2e0ea31f8f0a5

Low-temperature intracenter relaxation times of shallow donors in germanium

Autor: G. N. Kulipanov, R.Kh. Zhukavin, N. Deßmann, Harald Schneider, O. A. Shevchenko, Nikolay Vinokurov, K. A. Kovalevskii, N. V. Abrosimov, V. V. Tsyplenkov, Heinz-Wilhelm Hübers, V. V. Gerasimov, V.N. Shastin, Yu. Yu. Choporova, Sergey M. Sergeev, S.G. Pavlov, Boris A. Knyazev

Publikováno v: JETP Letters 106(2017), 571-575

The relaxation times of localized states of antimony donors in unstrained and strained germanium uniaxially compressed along the [111] crystallographic direction are measured at cryogenic temperatures. The measurements are carried out in a single-wav

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::90b7bff886d38ab0cb2198526731e7c5
https://doi.org/10.1134/s0021364017210147

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Computation of the Stark effect in P impurity states in silicon

Autor: Alberto Debernardi, Marco Fanciulli, Alfonso Baldereschi

Publikováno v: Physical review. B, Condensed matter and materials physics (Online) 74 (2006): 035202-1–035202-5. doi:10.1103/PhysRevB.74.035202
info:cnr-pdr/source/autori:Debernardi, A; Baldereschi, A; Fanciulli, M/titolo:Computation of the Stark effect in P impurity states in silicon/doi:10.1103%2FPhysRevB.74.035202/rivista:Physical review. B, Condensed matter and materials physics (Online)/anno:2006/pagina_da:035202-1/pagina_a:035202-5/intervallo_pagine:035202-1–035202-5/volume:74

We compute within the effective-mass theory and without adjustable parameters the Stark effect for shallow P donors in Si with anisotropic band structure. Valley-orbit coupling is taken into account in a nonperturbative way and scattering effects of

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::aede70ab870bfc8209640e59cfdf5fec
https://doi.org/10.1103/physrevb.74.035202

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