Zobrazeno 1 - 10
of 53 147
pro vyhledávání: '"semiconductor device"'
Publikováno v:
Kulicke & Soffa Industries, Inc. MarketLine Company Profile. 7/11/2024, p1-20. 20p.
Publikováno v:
Kulicke & Soffa Industries, Inc. MarketLine Company Profile. 6/20/2023, p1-20. 20p.
Publikováno v:
Kulicke & Soffa Industries, Inc. MarketLine Company Profile. 8/3/2022, p1-20. 20p.
Publikováno v:
Melexis NV MarketLine Company Profile. 12/16/2021, p1-36. 36p.
Publikováno v:
Kulicke & Soffa Industries, Inc. MarketLine Company Profile. 5/19/2021, p1-18. 18p.
Publikováno v:
Kulicke & Soffa Industries, Inc. MarketLine Company Profile. 4/16/2020, p1-18. 18p.
Publikováno v:
Melexis NV MarketLine Company Profile. 6/19/2020, p1-31. 31p.
Publikováno v:
IET Microwaves, Antennas & Propagation, Vol 18, Iss 11, Pp 849-859 (2024)
Abstract This work presents the effect of temperature change on the capacitance of silicon PIN diodes and the resulting change in performance of RF limiters at very high frequency (VHF). Device temperatures were varied between −25 ºC and 100 ºC,
Externí odkaz:
https://doaj.org/article/4980a546d7d449e09e8bb6ef3bc9c781
Autor:
Junji Cheng, Tao Zhong, Huan Li, Ping Li, Bo Yi, Haimeng Huang, Siliang Wang, Qiang Hu, Hongqiang Yang
Publikováno v:
IET Power Electronics, Vol 17, Iss 15, Pp 2584-2590 (2024)
Abstract An improved 4H‐SiC SBD‐wall‐integrated trench metal‐oxide‐semiconductor (SWITCH‐MOS) with n‐bury and split‐gate is proposed. Under the premise of ensuring breakdown voltage (BV), the n‐bury layer can smooth the path to curr
Externí odkaz:
https://doaj.org/article/14c6ba938e2d4446bddf52aada84db6e
Publikováno v:
IET Power Electronics, Vol 17, Iss 15, Pp 2393-2404 (2024)
Abstract Threshold voltage (VTH) instability affects the reliability of silicon carbide (SiC) MOSFETs. In this article, the influence of gate bias (VGS) and high temperature on VTH instability is investigated under wide VGS and very‐high temperatur
Externí odkaz:
https://doaj.org/article/9299c9a7be9f40d7a4569db7cece43a2