Zobrazeno 1 - 10
of 4 021
pro vyhledávání: '"schottky diodes"'
Publikováno v:
Advanced Science, Vol 11, Iss 38, Pp n/a-n/a (2024)
Abstract Nearly four decades have passed since IBM scientists pioneered atomic force microscopy (AFM) by merging the principles of a scanning tunneling microscope with the features of a stylus profilometer. Today, electrical AFM modes are an indispen
Externí odkaz:
https://doaj.org/article/011ea0960d724756bab9941cc295cfce
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 12, Pp 717-722 (2024)
The research on high power 190 GHz doubler based on the GaAs Schottky diodes is proposed in this paper. The frequency doubler comprises a improved diode configuration that increases the number of anodes by changing the diode arrangement to improve po
Externí odkaz:
https://doaj.org/article/2bc2ac599bd845e09dd8cd4a3a9842ff
Publikováno v:
Journal of Microwaves, Optoelectronics and Electromagnetic Applications, Vol 23, Iss 1 (2024)
Abstract This paper presents a study on Active Frenquency Selective Surface (AFSS) for applications in modern wireless communication systems. Initially, an FSS with an element inspired by convoluted metallic lines printed on a dielectric substrate of
Externí odkaz:
https://doaj.org/article/22a5e2ff6d1d4a03bd0ccdeb9b2bfdeb
Autor:
Zenghui Liu, Xiaobo Zhang, Zhiwen Liang, Fengge Wang, Yanyan Xu, Xien Yang, Xin Li, Yisheng Liang, Lizhang Lin, Xiaodong Li, Wenbo Zhao, Xin Cao, Xinqiang Wang, Baijun Zhang
Publikováno v:
Micromachines, Vol 15, Iss 8, p 959 (2024)
GaN Schottky diodes show great potential in high-power terahertz frequency multipliers. The thermal characteristics of GaN Schottky diodes with single and double-row anode arrangements are described in this paper. The temperature distribution inside
Externí odkaz:
https://doaj.org/article/9e05e154c3944e1ca13e6e8dd5f06be2
Autor:
Carlos Hurtado, Simone Ciampi
Publikováno v:
Surfaces, Vol 6, Iss 3, Pp 281-290 (2023)
Triboelectric nanogenerators (TENGs) based on sliding metal–semiconductor junctions are an emerging technology that can efficiently convert mechanical into electrical energy. These miniature autonomous power sources can output large direct current
Externí odkaz:
https://doaj.org/article/a63b436ef6604f1b8011a96300bf4147
Publikováno v:
Micromachines, Vol 15, Iss 6, p 719 (2024)
This study focuses on the impact of negative fixed charge, achieved through fluorine (F) implantation, on breakdown voltage (BV) enhancement in vertical GaN Schottky diodes. Several device and implant-related parameters are examined using Synopsys Se
Externí odkaz:
https://doaj.org/article/4938bf9fedd4418e9296ce2a8088c95b
Autor:
Humberto Pereira Da Paz, Vinicius Santana Da Silva, Renan Diniz, Renan Trevisoli, Carlos Eduardo Capovilla, Ivan Roberto Santana Casella
Publikováno v:
IEEE Access, Vol 11, Pp 54122-54132 (2023)
This article aims to contribute for the improvement of low-power Radio Frequency Energy Harvesting (RFEH) designs based on Schottky Barrier Diode (SBD) rectifiers, presenting a study of the relationship between RF-DC Power Conversion Efficiency (PCE)
Externí odkaz:
https://doaj.org/article/10b94b1d636e442bb710fa073f566601
Autor:
Chang-Hee Hyoung, Jung-Hwan Hwang
Publikováno v:
ETRI Journal, Vol 44, Iss 5, Pp 759-768 (2022)
A novel energy harvesting technique that uses conducted electromagnetic interference as an energy source is presented. Conducted EMI generated from fluorescent light using a switched-mode power supply was measured and modeled as an equivalent voltage
Externí odkaz:
https://doaj.org/article/4ee63600fff145ffbc97c6536892cf9f
Autor:
C. E. Quiñones, D. Khachariya, P. Reddy, S. Mita, J. Almeter, P. Bagheri, S. Rathkanthiwar, R. Kirste, S. Pavlidis, E. Kohn, R. Collazo, Z. Sitar
Publikováno v:
Applied Physics Express, Vol 17, Iss 10, p 101002 (2024)
AlN Schottky barrier diodes with low ideality factor (5 kA cm ^−2 ), and high breakdown voltage (680 V) are reported. The device structure consisted of a two-layer, quasi-vertical design with a lightly doped AlN drift layer and a highly doped Al _0
Externí odkaz:
https://doaj.org/article/c21dda7d9e944cc5a823532085155080
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