Zobrazeno 1 - 9
of 9
pro vyhledávání: '"scanning liquid phase epitaxy"'
Autor:
Tsybulenko V. V., Shutov S. V.
Publikováno v:
Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, Iss 5-6, Pp 33-39 (2020)
Heterostructures with lattice mismatched and compositionally different layers are widely used in modern electronic and optoelectronic device engineering. Generally such structures are manufactured by the methods of metal-organic vapor phase epitaxy,
Externí odkaz:
https://doaj.org/article/33cc439160b8474dafae850217f2cfbb
Publikováno v:
Semiconductor Physics, Quantum Electronics & Optoelectronics, Vol 23, Iss 3, Pp 294-301 (2020)
We carried out the modelling of separate technological stages of scanning liquid phase epitaxy (SLPE) technique: wetting the substrate by the solution-melt using Ampere force, growing the epitaxial layer during a short-time contact between the substr
Externí odkaz:
https://doaj.org/article/fbbe2f6e0c45451c86c47d97732dd2c2
Autor:
V. V. Tsybulenko, S. V. Shutov
Publikováno v:
Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, Iss 5-6, Pp 33-39 (2020)
Heterostructures with lattice mismatched and compositionally different layers are widely used in modern electronic and optoelectronic device engineering. Generally such structures are manufactured by the methods of metal-organic vapor phase epitaxy,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1b8b081c86ccb250d2578912c635ab8f
http://tkea.com.ua/journalarchive/2020_5-6/6.pdf
http://tkea.com.ua/journalarchive/2020_5-6/6.pdf
Publikováno v:
Semiconductor Physics, Quantum Electronics & Optoelectronics, Vol 23, Iss 3, Pp 294-301 (2020)
We carried out the modelling of separate technological stages of scanning liquid phase epitaxy (SLPE) technique: wetting the substrate by the solution-melt using Ampere force, growing the epitaxial layer during a short-time contact between the substr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::53273774a6e602667ff3062357292739
https://doi.org/10.15407/spqeo23.03.294
https://doi.org/10.15407/spqeo23.03.294
Publikováno v:
KPI Science News, Vol 0, Iss 3, Pp 58-64 (2020)
Background. Growing of both thin and thick epitaxial layers is an essential part of semiconductor device technology. Liquid phase epitaxy is among well-known technological methods. There are pulse methods of liquid phase epitaxy specially developed f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2f7dc3bbcd9f3aa949e0c32f65081848
https://doi.org/10.20535/kpi-sn.2020.3.197877
https://doi.org/10.20535/kpi-sn.2020.3.197877
Publikováno v:
KPI Science News; No. 2 (2021)
Научные вести КПИ; № 2 (2021)
Наукові вісті КПІ; № 2 (2021)
Научные вести КПИ; № 2 (2021)
Наукові вісті КПІ; № 2 (2021)
Background. Single- and multi-layer metal films are widely utilized in modern electronics and optoelectronics as ohmic contacts. As a rule, the films are deposited by thermal evaporation, ion sputtering and chemical vapour deposition. However the met
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=scientific_p::3847b2206cd2a1750ae24f45bb44aef9
http://scinews.kpi.ua/article/view/214450
http://scinews.kpi.ua/article/view/214450
Publikováno v:
Наукові вісті КПІ; № 3 (2020); 58-64
KPI Science News; № 3 (2020); 58-64
Научные вести КПИ; № 3 (2020); 58-64
KPI Science News; № 3 (2020); 58-64
Научные вести КПИ; № 3 (2020); 58-64
Background. Growing of both thin and thick epitaxial layers is an essential part of semiconductor device technology. Liquid phase epitaxy is among well-known technological methods. There are pulse methods of liquid phase epitaxy specially developed f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=scientific_p::ee571e9f8cbc60b0fce26f2b10200980
http://scinews.kpi.ua/article/view/197877
http://scinews.kpi.ua/article/view/197877
Проблематика. Вирощування як тонких, так і товстих епітаксійних шарів є невід’ємною частиною технології напівпровідникових приладів.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______2635::182cb449f9d902e3807b0405a2b65635
https://doi.org/10.20535/kpi-sn.2020.3.197877
https://doi.org/10.20535/kpi-sn.2020.3.197877
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