Analysis of Kirk Effect in Nanoscale Quantum Well Heterojunction Bipolar Transistor Laser

Autor: ashkan horri, Seyedeh Zahra Mirmoeini

Publikováno v: Journal of Optoelectronical Nanostructures, Vol 5, Iss 2, Pp 25-38 (2020)

In this paper, we present an analytical model to analysis the kirk effect onstatic and dynamic responses of quantum well heterojunction bipolar transistor lasers(HBTLs). Our analysis is based on solving the kirk current equation, continuityequation a

Externí odkaz: https://doaj.org/article/644ba3abb76a426ba29408c39552eb8d

Design and Optimization of GeSn Waveguide Photodetectors for 2-µm Band Silicon Photonics

Autor: Soumava Ghosh, Radhika Bansal, Greg Sun, Richard A. Soref, Hung-Hsiang Cheng, Guo-En Chang

Publikováno v: Sensors, Vol 22, Iss 11, p 3978 (2022)

Silicon photonics is emerging as a competitive platform for electronic–photonic integrated circuits (EPICs) in the 2 µm wavelength band where GeSn photodetectors (PDs) have proven to be efficient PDs. In this paper, we present a comprehensive theo

Externí odkaz: https://doaj.org/article/2c9cb038ec194b8a84eb76cf775f5255

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Enhanced intrinsic voltage gain in artificially stacked bilayer CVD graphene field effect transistors

Autor: Thomas Zimmer, Satender Kataria, J.D. Aguirre-Morales, Max C. Lemme, Himadri Pandey, Sebastien Fregonese, Mario Iannazzo, Eduard Alarcon, Vikram Passi

Publikováno v: Annalen der Physik
Annalen der Physik, 2017, 529 (11), ⟨10.1002/andp.201700106⟩
Annalen der Physik, Wiley, 2017, 529 (11), ⟨10.1002/andp.201700106⟩

We report on electronic transport in dual-gate, artificially stacked bilayer graphene field effect transistors (BiGFETs) fabricated from large-area chemical vapor deposited (CVD) graphene. The devices show enhanced tendency to current saturation, whi

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::549412f18cf428bead91706b85e5b302
http://arxiv.org/abs/2212.01877

Investigation Influence of Channel Transport on Output Characteristics in Sub-100nm Heterojunction Tunnel FET

Autor: Feng Liang, Haifeng Chen, Yunhe Guan, Siwei Huang

Publikováno v: IEEE Journal of the Electron Devices Society, Vol 9, Pp 783-788 (2021)

In this paper, the influences of channel transport on the output characteristic in sub-100nm heterojunction tunnel FET have been investigated through TCAD simulation. The calibrated tunneling and transport parameters with experiment have been adopted

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::108c8c48cf4c1ec72a44feafc96fdd15
https://ieeexplore.ieee.org/document/9518369/