Zobrazeno 1 - 10
of 13
pro vyhledávání: '"santosh kurinec"'
Autor:
Paul Jacob, Pooja C. Patil, Shan Deng, Kai Ni, Khushwant Sehra, Mridula Gupta, Manoj Saxena, David MacMahon, Santosh Kurinec
Publikováno v:
Solids, Vol 4, Iss 4, Pp 356-367 (2023)
This study investigates the electrical characteristics observed in n-channel and p-channel ferroelectric field effect transistor (FeFET) devices fabricated through a similar process flow with 10 nm of ferroelectric hafnium zirconium oxide (HZO) as th
Externí odkaz:
https://doaj.org/article/33fa9c7181264f41b8b422aaccb04a85
Autor:
Zhouhang Jiang, Zijian Zhao, Shan Deng, Yi Xiao, Yixin Xu, Halid Mulaosmanovic, Stefan Duenkel, Sven Beyer, Scott Meninger, Mohamed Mohamed, Rajiv Joshi, Xiao Gong, Santosh Kurinec, Vijaykrishnan Narayanan, Kai Ni
Publikováno v:
IEEE Transactions on Electron Devices. 69:6722-6730
Autor:
Kai Ni, Ronald D. Schrimpf, Daniel M. Fleetwood, enxia zhang, Hussam Amrouch, Vijaykrishnan Narayanan, santosh kurinec, xiao gong, sven beyer, steven soss, stefan duenkel, Halid Mulaosmanovic, Zubair Faris, munazza sayed, Xuyi Luo, Zixiang Guo, Zhouhang Jiang
In this work, a thorough assessment of the robustness of complementary channel HfO2 ferroelectric FET (FeFET) against total ionizing dose (TID) radiation is conducted, with the goal of determining its suitability for use as high-performance and energ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::776c21ab63d0b82e6e7bac1b98f70a2c
https://doi.org/10.36227/techrxiv.22933937
https://doi.org/10.36227/techrxiv.22933937
Autor:
Nujhat Tasneem, Muhammad M. Islam, Zheng Wang, Zijian Zhao, Navnidhi Upadhyay, Sarah F. Lombardo, Hang Chen, Jae Hur, Dina Triyoso, Steven Consiglio, Kanda Tapily, Robert Clark, Gert Leusink, Santosh Kurinec, Suman Datta, Shimeng Yu, Kai Ni, Matthias Passlack, Winston Chern, Asif Khan
Publikováno v:
IEEE Transactions on Electron Devices. 69:1568-1574
Autor:
Shan Deng, Zijian Zhao, You Sung Kim, Stefan Duenkel, David MacMahon, Ravi Tiwari, Nilotpal Choudhury, Sven Beyer, Xiao Gong, Santosh Kurinec, Kai Ni
Publikováno v:
IEEE Transactions on Electron Devices. 69:1503-1511
Autor:
Carolyn Spaulding, Alex Taylor, Scott Williams, Glenn Packard, Gabriel Curvacho, Santosh Kurinec
Publikováno v:
Materials Letters. 325:132839
Autor:
Santosh Kurinec, Michael Jackson, Thomas Schulte, Nathaniel Kane, Elaine Lewis, Surendra Gupta
Publikováno v:
2008 Annual Conference & Exposition Proceedings.
Autor:
Santosh Kurinec, Surendra Gupta
Publikováno v:
2007 Annual Conference & Exposition Proceedings.
Publikováno v:
Materials Letters. 161:96-99
Transition metal dichalcogenide MoS 2 has attracted significant interest for its unique electronic, optical and catalytic properties. Layered crystalline MoS 2 can be mechanically exfoliated into single monolayers. With the advancement of microscopic