Zobrazeno 1 - 10
of 2 000
pro vyhledávání: '"rie"'
Autor:
Do Thi, Thuy Lan1 landtt@ussh.edu.vn
Publikováno v:
Asian Ethnicity. Jan2025, Vol. 26 Issue 1, p199-201. 3p.
Autor:
Hawkins, Ashley
Publikováno v:
Booklist. 11/1/2024-11/15/2024, Vol. 121 Issue 5/6, p50-50. 1/7p.
Publikováno v:
Frontiers in Physics, Vol 12 (2024)
Regional innovation ecosystems (RIEs) are a new paradigm in innovation research, and the development of RIEs under digitization is constrained by the development of innovation environments. The study of ecological niche suitability of regional innova
Externí odkaz:
https://doaj.org/article/0bae725f18fe4f5d93865b6919fc61d8
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 12, Pp 145-149 (2024)
In this paper, a back-incidence 3D Composite Electrode Silicon Detector (3DCESD) is proposed and simulated. The electrode structure comprises 70% trench-like and 30% column-like features, achieved through a single etching step utilizing the RIE-lag p
Externí odkaz:
https://doaj.org/article/92e43da75e75417284564f8691ede4f7
Autor:
Marta Różycka, Agata Jasik, Paweł Kozłowski, Krzysztof Bracha, Jacek Ratajczak, Anna Wierzbicka-Miernik
Publikováno v:
Metrology and Measurement Systems, Vol vol. 30, Iss No 4, Pp 809-819 (2023)
The paper presents the effect of ICP-RIE etching time using one-component plasma on various parameters of an InAs/GaSb type II superlattice matrix. In the studies, two samples used at different BCl3 gas flow rates were compared and it was found that
Externí odkaz:
https://doaj.org/article/01a1cefabe2d49a08c932b9a5dede0cd
Publikováno v:
Molecules, Vol 29, Iss 21, p 5008 (2024)
Photothermal materials often prioritize solar absorption while neglecting thermal radiation losses, which diminishes thermal radiation conversion efficiency. This study addresses this gap by introducing a germanium (Ge) subwavelength structure (SWS)
Externí odkaz:
https://doaj.org/article/a0f2f013e1204756874c51ef5de5e374
Publikováno v:
Photonics, Vol 11, Iss 8, p 726 (2024)
Reactive ion etching (RIE) with fluorocarbon plasma is a facile method to tracelessly remove the subsurface damage layer of fused silica but has the drawback of unsatisfactory improvement in laser damage resistance due to the induction of secondary d
Externí odkaz:
https://doaj.org/article/ef80baefd7784d019b58f7635c7aae60
Autor:
Nguyen Hoang Tung, Heesoo Lee, Duy Khoe Dinh, Dae-Woong Kim, Jin Young Lee, Geon Woong Eom, Hyeong-U Kim, Woo Seok Kang
Publikováno v:
Sensors, Vol 24, Iss 10, p 3089 (2024)
Highly selective etching of silicon nitride (Si3N4) and silicon dioxide (SiO2) has received considerable attention from the semiconductor community owing to its precise patterning and cost efficiency. We investigated the etching selectivity of Si3N4
Externí odkaz:
https://doaj.org/article/43ee93a8c8a54e7589ee55bb3ef84d04
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