Zobrazeno 1 - 10
of 1 416
pro vyhledávání: '"resistive memory"'
Autor:
Raphaël Dawant, Matthieu Gaudreau, Marc-Antoine Roy, Pierre-Antoine Mouny, Matthieu Valdenaire, Pierre Gliech, Javier Arias Zapata, Malek Zegaoui, Fabien Alibart, Dominique Drouin, Serge Ecoffey
Publikováno v:
Micro and Nano Engineering, Vol 23, Iss , Pp 100251- (2024)
In recent years, resistive memories have emerged as a pivotal advancement in the realm of electronics, offering numerous advantages in terms of energy efficiency, scalability, and non-volatility [1]. Characterized by their unique resistive switching
Externí odkaz:
https://doaj.org/article/623ddebe051d45268b491943aaff42f6
Publikováno v:
Cailiao gongcheng, Vol 51, Iss 2, Pp 141-151 (2023)
The resistive switching layer of CeO2-x-TiO2 film was prepared on the FTO substrate by the sol-gel method and spin coating technique, and the Al/CeO2-x-TiO2/FTO resistive switching device was fabricated by depositing thin Al top electrode on the surf
Externí odkaz:
https://doaj.org/article/42fd1f352d2249c8832780b9a2d3d25f
Autor:
Piergiulio Mannocci, Daniele Ielmini
Publikováno v:
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, Vol 9, Iss 1, Pp 47-55 (2023)
Matrix-based computing is ubiquitous in an increasing number of present-day machine learning applications such as neural networks, regression, and 5G communications. Conventional systems based on von-Neumann architecture are limited by the energy and
Externí odkaz:
https://doaj.org/article/a6dc1184a83b486bac81d16279e69eb6
Publikováno v:
Memories - Materials, Devices, Circuits and Systems, Vol 4, Iss , Pp 100045- (2023)
The ability of resistive memory (ReRAM) to naturally conduct vector–matrix multiplication (VMM), which is the primary operation carried out during the training and inference of neural networks, has caught the interest of researchers. The memristor
Externí odkaz:
https://doaj.org/article/799dfc66aeb54f359c30c4bace68b6e0
Autor:
Juan B. Roldán, Enrique Miranda, David Maldonado, Alexey N. Mikhaylov, Nikolay V. Agudov, Alexander A. Dubkov, Maria N. Koryazhkina, Mireia B. González, Marco A. Villena, Samuel Poblador, Mercedes Saludes-Tapia, Rodrigo Picos, Francisco Jiménez-Molinos, Stavros G. Stavrinides, Emili Salvador, Francisco J. Alonso, Francesca Campabadal, Bernardo Spagnolo, Mario Lanza, Leon O. Chua
Publikováno v:
Advanced Intelligent Systems, Vol 5, Iss 6, Pp n/a-n/a (2023)
Resistive memories are outstanding electron devices that have displayed a large potential in a plethora of applications such as nonvolatile data storage, neuromorphic computing, hardware cryptography, etc. Their fabrication control and performance ha
Externí odkaz:
https://doaj.org/article/8abc1b18881346218ff8c2bbe6e7d4a8
Autor:
Guoshu Liu, Jinghong Zhang, Zuxin She, Liangyi Peng, Lunjun Qu, Kaiti Wang, Hailong Tang, Chaolong Yang
Publikováno v:
Engineering Reports, Vol 5, Iss 6, Pp n/a-n/a (2023)
Abstract With the quick development of flexible memory electronics, multifunctional organic materials have been the necessary for fabricating electronics. In this work, the highly transparent and flexible electrode was successfully prepared by coatin
Externí odkaz:
https://doaj.org/article/50145453690a4d8f94b445cf4d0816cd
Publikováno v:
Nanomaterials, Vol 13, Iss 24, p 3117 (2023)
Memristors are recognized as crucial devices for future nonvolatile memory and artificial intelligence. Due to their typical neuron-synapse-like metal–insulator–metal(MIM) sandwich structure, they are widely used to simulate biological synapses a
Externí odkaz:
https://doaj.org/article/c758ff813abc40738eea614fa40252a6
Akademický článek
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Akademický článek
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Autor:
Andrey G. Petrov, Ivan I. Shvetsov-Shilovskiy, Sergey B. Shmakov, Anastasia V. Ulanova, Anna B. Boruzdina
Publikováno v:
Безопасность информационных технологий, Vol 29, Iss 2, Pp 100-111 (2022)
The aim of the study is to consider the prospects of using resistive memory microcircuits (RRAM, CBRAM) for space applications. Total dose and single event effects in resistive memory test cells and finished CMOS RRAM microcircuits were investigated.
Externí odkaz:
https://doaj.org/article/fd8fbafe5cf54f69b67c6260e0801268