Zobrazeno 1 - 10
of 134
pro vyhledávání: '"resistive RAM (RRAM)"'
Akademický článek
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Autor:
Andrea Baroni, Artem Glukhov, Eduardo Pérez, Christian Wenger, Enrico Calore, Sebastiano Fabio Schifano, Piero Olivo, Daniele Ielmini, Cristian Zambelli
Publikováno v:
Frontiers in Neuroscience, Vol 16 (2022)
One of the objectives fostered in medical science is the so-called precision medicine, which requires the analysis of a large amount of survival data from patients to deeply understand treatment options. Tools like machine learning (ML) and deep neur
Externí odkaz:
https://doaj.org/article/fc722f8ddb564ece8c127eb70dfd8593
Autor:
Yeon-Joon Choi, Min-Hwi Kim, Suhyun Bang, Tae-Hyeon Kim, Dong Keun Lee, Kyungho Hong, Chae Soo Kim, Sungjun Kim, Seongjae Cho, Byung-Gook Park
Publikováno v:
IEEE Access, Vol 8, Pp 228720-228730 (2020)
In this study, the electrical characteristics of TiN/SiNx/TiN and TiN/Ag/SiNx/TiN RRAMs were thoroughly investigated through I-V measurements. Our novel Ag-inserted silicon nitride-based resistive switching memory (RRAM) achieved switching operation
Externí odkaz:
https://doaj.org/article/ddfa17aac0524a3c9faa17e4191ddceb
Publikováno v:
Journal of Low Power Electronics and Applications, Vol 11, Iss 4, p 36 (2021)
Several promising non-volatile memories (NVMs) such as magnetic RAM (MRAM), spin-transfer torque RAM (STTRAM), ferroelectric RAM (FeRAM), resistive RAM (RRAM), and phase-change memory (PCM) are being investigated to keep the static leakage within a t
Externí odkaz:
https://doaj.org/article/d8f765adaf9640ecac31280ff58cf1b5
Autor:
Thilo Werner, Elisa Vianello, Olivier Bichler, Daniele Garbin, Daniel Cattaert, Blaise Yvert, Barbara De Salvo, Luca Perniola
Publikováno v:
Frontiers in Neuroscience, Vol 11 (2017)
Externí odkaz:
https://doaj.org/article/f605616e0945461fbbbb89c17ee99e63
Akademický článek
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Autor:
Seongjae Cho, Tae-Hyeon Kim, Sungjun Kim, Dong Keun Lee, Byung-Gook Park, Suhyun Bang, Kyungho Hong, Yeon-Joon Choi, Min-Hwi Kim, Chae Soo Kim
Publikováno v:
IEEE Access, Vol 8, Pp 228720-228730 (2020)
In this study, the electrical characteristics of TiN/SiNx/TiN and TiN/Ag/SiNx/TiN RRAMs were thoroughly investigated through I-V measurements. Our novel Ag-inserted silicon nitride-based resistive switching memory (RRAM) achieved switching operation
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1fda4a5ba8cf3ede01bb2df83c8ce4bc
https://ieeexplore.ieee.org/document/9301470/
https://ieeexplore.ieee.org/document/9301470/
This work reports 2-bits/cell hafnium oxide-based stacked resistive random access memory devices fabricated on flexible polyimide substrates for neuromorphic applications considering the high thermal budget. The ratio of low-resistance state current
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od_______610::faa0a649b57daa8b46f00f23984ff0ad
https://publica.fraunhofer.de/handle/publica/436290
https://publica.fraunhofer.de/handle/publica/436290
Publikováno v:
Journal of Electronic Testing
Journal of Electronic Testing, Springer Verlag, 2021, 37 (4), pp.515-532. ⟨10.1007/s10836-021-05965-x⟩
Journal of Electronic Testing: : Theory and Applications
Journal of Electronic Testing: : Theory and Applications, 2021, 37 (4), pp.515-532. ⟨10.1007/s10836-021-05965-x⟩
Journal of Electronic Testing, Springer Verlag, 2021, 37 (4), pp.515-532. ⟨10.1007/s10836-021-05965-x⟩
Journal of Electronic Testing: : Theory and Applications
Journal of Electronic Testing: : Theory and Applications, 2021, 37 (4), pp.515-532. ⟨10.1007/s10836-021-05965-x⟩
International audience; Static Random-Access Memories (SRAMs) are an integral part of the chip industry, occupying a noticeable share of the memory market due to their high performance and compatibility with CMOS technology. Traditional SRAMs do not
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d0acbc2e73420f212d1de15dc5bc9c16
https://hal.archives-ouvertes.fr/hal-03501909/document
https://hal.archives-ouvertes.fr/hal-03501909/document
Akademický článek
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