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pro vyhledávání: '"resist fluorescence"'
Absorbed X-ray photons generate electrons which influence the resolution in X-ray lithography. In this paper electrons released from the mask membrane, the resist and the sublayer are characterized experimentally. The effects of resist and target mat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od_______610::eb59b030311886861a915c5efb3a2c13
https://publica.fraunhofer.de/handle/publica/175911
https://publica.fraunhofer.de/handle/publica/175911
