Croissance epitaxiale et recuit laser nanosecondes d'hétérostructures GeSn/SiGeSn

Autor: Frauenrath, Marvin

Publikováno v: Physique [physics]. Université Grenoble Alpes [2020-..], 2022. Français. ⟨NNT : 2022GRALY092⟩

To extend Si integrated photonics from the Near to the Mid-Infrared, new light sources are required. Direct band gap GeSn with a Sn concentration above 8% is a promising candidate to fulfill such a task. Two doping strategies were investigated in ord

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=od______3515::b76b630fc26fe6026c4087534abdc219
https://theses.hal.science/tel-04086845/file/FRAUENRATH_2022_archivage.pdf

Study of defects induced by excimer laser annealing in silicon

Autor: Monflier, Richard

Publikováno v: Micro et nanotechnologies/Microélectronique. Université Toulouse 3 Paul Sabatier (UT3 Paul Sabatier), 2019. Français
Micro et nanotechnologies/Microélectronique. Université Paul Sabatier-Toulouse III, 2019. Français. ⟨NNT : 2019TOU30067⟩

The micro-electronic domain is constantly evolving in response to the continuous emerging of new application fields as well as new users' needs. The fabrication of heavily-doped regions for ultra-shallow junctions is a major issue to ensure its evolu

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::2a113206ee4bbdff2a83a74001318e61
https://hal.laas.fr/tel-02162058/document

Caractérisation de techniques d'implantations ioniques alternatives pour l'optimisation du module source-drain de la technologie FDSOI 28nm

Autor: Daubriac, Richard

Durant ces dernières années, l’apparition de nouvelles architectures (FDSOI, FinFETs ou NW-FETs) et l’utilisation de nouveaux matériaux (notamment SiGe) ont permis de repousser les limites des performances des dispositifs MOS et de contourner

Externí odkaz: http://www.theses.fr/2018ISAT0031/document

Characterization of alternative ion implantation techniques for the optimization of the source-drain module of FDSOI 28 nm technology

Autor: Daubriac , Richard

Publikováno v: Micro et nanotechnologies/Microélectronique. Institut national des sciences appliquées de Toulouse, 2018. Français

National audience; During the past few decades, the emergence of new architectures (FDSOI, FinFETs or NW-FETs) and the use of new materials (like silicon/germanium alloys) allowed to go further in MOS devices scaling by solving short channel effect i

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=od______4074::e9cf836d3d907f777e41f45a4edbcbef
https://hal.laas.fr/tel-02053232/document

Optical and Electrical Breakdown of Carbon Allotropes : Mechanisms and Applications for Data Storage

Autor: Loisel, Loïc

Publikováno v: Physique [physics]. Université Paris Saclay (COmUE); Nanyang Technological University (Singapour), 2016. Français. ⟨NNT : 2016SACLX021⟩

Today, data storage applications rely mainly on two types of materials: chalcogenides for optical storage (e.g. Blu-Ray) and silicon for electronic storage (e.g. Flash memory). While these materials have proven to be the most efficient for widespread

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::7ba13878bb015cb39000412e91e1edeb
https://pastel.archives-ouvertes.fr/tel-01665811v2/file/54219_LOISEL_2016_archivage.pdf