Zobrazeno 1 - 10
of 12
pro vyhledávání: '"rectifying gate contact"'
Autor:
Maghnia Mattalah, Brahim Benbakhti, Nour Eddine Bourzgui, Hassane Ouazzani Chahdi, J.-C. Gerbedoen, Abdelatif Jaouad, Ali Soltani
Publikováno v:
IEEE Transactions on Nanotechnology
IEEE Transactions on Nanotechnology, Institute of Electrical and Electronics Engineers, 2020, 19, pp.682-688. ⟨10.1109/TNANO.2020.3019916⟩
IEEE Transactions on Nanotechnology, 2020, 19, pp.682-688. ⟨10.1109/TNANO.2020.3019916⟩
IEEE Transactions on Nanotechnology, Institute of Electrical and Electronics Engineers, 2020, 19, pp.682-688. ⟨10.1109/TNANO.2020.3019916⟩
IEEE Transactions on Nanotechnology, 2020, 19, pp.682-688. ⟨10.1109/TNANO.2020.3019916⟩
Rectifying Titanium Nitride (TiN) gate contact technology is developed for AlGaN $/$ GaN based micro and nanometer HEMTs. A high compressive strain occurring in thinner TiN films (ranging from 5 nm to 60 nm), deposited by sputtering, leads to a reduc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bc95025a6b77e9e7dde36444d3d987a0
https://hal.archives-ouvertes.fr/hal-03322826
https://hal.archives-ouvertes.fr/hal-03322826
Akademický článek
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Publikováno v:
Journal of Applied Physics; 3/1/1994, Vol. 75 Issue 5, p2481, 8p
Autor:
Tadjer, Marko J., Wheeler, Virginia D., Shahin, David I., Eddy Jr., Charles R., Kub, Fritz J.
Publikováno v:
ECS Journal of Solid State Science & Technology; 2017, Vol. 6 Issue 4, pP165-P168, 4p, 1 Chart
Autor:
Grupen, Matt
Publikováno v:
IEEE Transactions on Microwave Theory & Techniques; Dec2014 Part 1, Vol. 62 Issue 12, p2868-2877, 10p
Autor:
Helms, D.R.
Publikováno v:
IEEE Princeton Section Sarnoff Symposium; 1995, p1-7, 7p
Autor:
Haddad, George I., Trew, Robert J.
Publikováno v:
IEEE Transactions on Microwave Theory & Techniques; Mar2002, Vol. 50 Issue 3, p760, 20p, 11 Black and White Photographs, 9 Diagrams, 1 Chart, 20 Graphs
Autor:
Kuo, H. C., Moser, B. G., Hsia, H., Tang, Z., Feng, M., Stillman, G. E., Lin, C. H., Chen, H.
Publikováno v:
Journal of Vacuum Science & Technology: Part B-Microelectronics & Nanometer Structures; 1999, Vol. 17 Issue 3, p1139-1143, 5p
Autor:
Turner, J.A.
Publikováno v:
Electronics & Power; Jun1981, Vol. 27 Issue 6, p455-458, 4p
Autor:
Tansley, T. L.
Publikováno v:
Journal of Physics E: Scientific Instruments; Jan1975, Vol. 8 Issue 1, p1-1, 1p