A High Full Well Capacity CMOS Image Sensor for Space Applications

Autor: Woo-Tae Kim, Cheonwi Park, Hyunkeun Lee, Ilseop Lee, Byung-Geun Lee

Publikováno v: Sensors, Vol 19, Iss 7, p 1505 (2019)

This paper presents a high full well capacity (FWC) CMOS image sensor (CIS) for space applications. The proposed pixel design effectively increases the FWC without inducing overflow of photo-generated charge in a limited pixel area. An MOS capacitor

Externí odkaz: https://doaj.org/article/9a89768a3f3e41c39db299d14ab8ee6d

A High Full Well Capacity CMOS Image Sensor for Space Applications

Autor: Byung-Geun Lee, Woo-Tae Kim, Cheonwi Park, Hyunkeun Lee, Ilseop Lee

Publikováno v: Sensors (Basel, Switzerland)
Sensors, Vol 19, Iss 7, p 1505 (2019)
Sensors
Volume 19
Issue 7

This paper presents a high full well capacity (FWC) CMOS image sensor (CIS) for space applications. The proposed pixel design effectively increases the FWC without inducing overflow of photo-generated charge in a limited pixel area. An MOS capacitor

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::346bf1cba6ee8b0a9eee1d8d1bee567e
https://pubmed.ncbi.nlm.nih.gov/30925711

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Modeling of Radiation Damage Effects at HighLuminosity LHC Expected Fluences: Measurements and Simulations

Autor: Arianna Morozzi, Francesco Moscatelli, Gian-Franco Dalla Betta, Marco Bomben, Gian Mario Bilei, Serena Mattiazzo, Daniele Passeri

Publikováno v: 2017 IEEE Nuclear Science Symposium and Medical Imaging Conference, NSS/MIC 2017, 21-28 October 2017
info:cnr-pdr/source/autori:Morozzi A.; Moscatelli F.; Passeri D.; Bilei G.M.; Betta G.-F.D.; Bomben M.; Mattiazzo S./congresso_nome:2017 IEEE Nuclear Science Symposium and Medical Imaging Conference, NSS%2FMIC 2017/congresso_luogo:/congresso_data:21-28 October 2017/anno:2018/pagina_da:/pagina_a:/intervallo_pagine
2017 IEEE Nuclear Science Symposium and Medical Imaging Conference
2017 IEEE Nuclear Science Symposium and Medical Imaging Conference, Oct 2017, Atlanta, United States. ⟨10.1109/NSSMIC.2017.8532824⟩

International audience; A practical, yet physically grounded, TCAD modeling approach to study the radiation damage effects on silicon detectors exposed to the very high fluences expected at High Luminosity LHC (greater than 2.2×10 16 1MeV n eq /cm 2

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7facb1770baea6bfae6d21d6bfa40ba5
http://hdl.handle.net/11391/1456982

Radiation Hardness After Very High Neutron Irradiation of Minimum Ionizing Particle Detectors Based on 4H-SiC p+n Junctions

Autor: Andrea Scorzoni, Stefano Lagomarsino, Roberta Nipoti, Igor Mandić, Francesco Moscatelli, Mara Bruzzi, Antonella Poggi, Günter Wagner, Silvio Sciortino

Publikováno v: IEEE transactions on nuclear science 53 (2006): 1557–1563. doi:10.1109/TNS.2006.872202
info:cnr-pdr/source/autori:Moscatelli F; Scorzoni A; Poggi A; Bruzzi M; Sciortino S; Lagomarsino S; Wagner G; Mandic I; Nipoti R/titolo:Radiation hardness after very high neutron irradiation of minimum ionizing particle detectors based on 4H-SiC p(+)n junctions/doi:10.1109%2FTNS.2006.872202/rivista:IEEE transactions on nuclear science/anno:2006/pagina_da:1557/pagina_a:1563/intervallo_pagine:1557–1563/volume:53

In this work we analyzed the radiation hardness of SiC p/sup +/ n diodes used as minimum ionizing particle (MIP) detectors after very high 1 MeV neutron fluences. The diode structure is based on ion implanted p/sup +/ emitter in an n-type epilayer wi

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c3800818535e6305734bbf24b94b5db1
http://hdl.handle.net/11391/152976