Zobrazeno 1 - 9
of 9
pro vyhledávání: '"quasi direct excitons"'
Данная работа посвящена исследованию GaAs/AlAs квантовых ям с разными конфигурациями ширины ямы и барьера. Целью работы было изучение смеши
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dffe5ef08e13bfb99ffdc4df58f25b65
Autor:
Rosyadi, Adzilah Shahna1 (AUTHOR), Lin, Ying‐Xuan1 (AUTHOR), Peng, Yu‐Hung1 (AUTHOR), Ho, Ching‐Hwa1,2 (AUTHOR) chho@mail.ntust.edu.tw
Publikováno v:
Advanced Science. 10/16/2024, Vol. 11 Issue 38, p1-14. 14p.
Autor:
Talalaev, V., Cirlin, G., Tonkikh, A., Zakharov, N., Werner, P., Gösele, U., Tomm, J., Elsaesser, T.
Publikováno v:
Nanoscale Research Letters; Dec2006, Vol. 1 Issue 2, p137-153, 17p
Autor:
Volodin, V. A.1,2 volodin@isp.nsc.ru, Gorokhov, E. B.1, Marin, D. V.1,2, Rinnert, H.3, Miska, P.3, Vergnat, M.3
Publikováno v:
JETP Letters. Mar2009, Vol. 89 Issue 2, p76-79. 4p. 1 Diagram, 3 Graphs.
Autor:
Jian Qi Shen, Jing Gu
Publikováno v:
Journal of the Physical Society of Japan; 2018, Vol. 87 Issue 4, p1-8, 8p
Publikováno v:
Nanoscale Research Letters, Vol 1, Iss 2, Pp 137-153 (2006)
AbstractThe luminescence properties of highly strained, Sb-doped Ge/Si multi-layer heterostructures with incorporated Ge quantum dots (QDs) are studied. Calculations of the electronic band structure and luminescence measurements prove the existence o
Externí odkaz:
https://doaj.org/article/fd95999a91804ac9af0d078e485d5cd8
Autor:
Nikolai Zakharov, Vadim Talalaev, G. E. Cirlin, Peter Werner, Jens W. Tomm, Alexander A. Tonkikh, Thomas Elsaesser, Ulrich Gösele
Publikováno v:
Nanoscale Research Letters
The luminescence properties of highly strained, Sb-doped Ge/Si multi-layer heterostructures with incorporated Ge quantum dots (QDs) are studied. Calculations of the electronic band structure and luminescence measurements prove the existence of an ele
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::29c4ff42ce170e0f497f92ab32732e89
https://doi.org/10.1007/s11671-006-9004-x
https://doi.org/10.1007/s11671-006-9004-x
Autor:
Knoss, Randolf W.
Since first developed in the early sixties, silicon chip technology has made vast leaps forward. From a rudimentary circuit with a mere handful of transistors, the chip has evolved into a technological wonder, packing millions of bits of information
Autor:
Mohamed Henini
The self-assembled nanostructured materials described in this book offer a number of advantages over conventional material technologies in a wide range of sectors. World leaders in the field of self-organisation of nanostructures review the current s